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What is the Fermi energy of gold (a monovalent metal with molar mass 197 g/mol and density 19.3g/cm3 )?

Short Answer

Expert verified

The Fermi energy of gold is 5.52eV.

Step by step solution

01

The given data

  • Molar mass of gold, A = 197 g/mol
  • Density of gold,d=19.30g/cm3
  • Gold is a monovalent metal.
02

Understanding the concept of Fermi energy

Using the given formula for the number of atoms per unit volume, we can get the required value of the conduction electrons per unit volume, considering that metal is monovalent. Now using this value in the equation of Fermi energy, we can calculate the Fermi energy of the metal.

Formulae:

The mass of an atom, M=A/NA,whereNA=6.022×1023mol-1 (i)

The number density of conduction electrons, n=dM (ii)

d=density of the atom, M = mass of a single atom

The equation of Fermi energy is EF=0.121h2mn2/3 (iii)

03

Calculation of Fermi energy

As gold is monovalent metal, each atom contributes one conduction electron; thus, the number density of conduction electrons should be equal to the number density of atoms.

For the given data, comparing equation (i) and (ii), we get the number density of the conduction electrons in gold as follows:

n=dA/NA=19.3g/cm3197g/mol/6.022×1023mol-1=5.90×1022cm-3=59.0nm-3

Using the above number density value in equation (iii), the Fermi energy of gold metal can be calculated as follows:

EF=0.121hc2mec2n2/3=0.1211240eV.nm2511×103eV59.0nm-32/3=5.52eV

Hence, the value of Fermi energy is 5.52 eV.

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Most popular questions from this chapter

Doping changes the Fermi energy of a semiconductor. Consider silicon, with a gap of 1.11eV between the top of the valence band and the bottom of the conduction band. At 300K the Fermi level of the pure material is nearly at the mid-point of the gap. Suppose that silicon is doped with donor atoms, each of which has a state 0.15eV below the bottom of the silicon conduction band, and suppose further that doping raises the Fermi level to 0.11eV below the bottom of that band (Fig. 41-22). For (a) pure and (b) doped silicon, calculate the probability that a state at the bottom of the silicon conduction band is occupied. (c) Calculate the probability that a state in the doped material (at the donor level) is occupied.

In a simplified model of an undoped semiconductor, the actual distribution of energy states may be replaced by one in which there are NVstates in the valence band, all having the same energyEV, andNCstates in the conduction band all these states having the same energyEc. The number of electrons in the conduction band equals the number of holes in the valence band.

  1. Show that this last condition implies that Ncexp(∆Ec/kT)+1=Nvexp(∆Ev/kT)+1in which∆Ec=∆Ec-∆EF and ∆Ev=-(∆Ev-∆EF).
  2. If the Fermi level is in the gap between the two bands and its distance from each band is large relative to kT then the exponentials dominate in the denominators. Under these conditions, show that EF=(Ec+Ev)2+kTIn(Nv+Nc)2and that ifNv≈Nc , the Fermi level for the undoped semiconductor is close to the gap’s center.

(a) What maximum light wavelength will excite an electron in the valence band of diamond to the conduction band? The energy gap is 5.50 eV. (b) In what part of the electromagnetic spectrum does this wavelength lie?

Calculate the density of states N(E)for metal at energy E=8.0eVand show that your result is consistent with the curve of Fig. 41-6.

What is the probability that, at a temperature of T = 300 K, an electron will jump across the energy gapEg(=5.5eV) in a diamond that has a mass equal to the mass of Earth? Use the molar mass of carbon in Appendix F; assume that in diamond there is one valence electron per carbon atom.

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