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Calculate the density of states N(E)for metal at energy E=8.0eVand show that your result is consistent with the curve of Fig. 41-6.

Short Answer

Expert verified

The density of states NEfor metal is1.9×1028m-3.eV-1 and it is consistent with the curve of figure 41-6.

Step by step solution

01

The given data

Energy of the metal,E=8eV

02

the concept of density of states

The number of states per unit energy range per unit volume (NE), present in a sample of the material at a particular energy (E), is known as density of states. The formula for density of states is given as-

NE=82Ï€³¾3/2h3E1/2.............................1whereh=6.63×10-34J.sandm=9.1×10-31kg

03

Calculation of the density of states of a metal

We can write equation (1) as follows:

NE=CE1/2

In the above equation, the value of C is -

C=82Ï€³¾3/2h3=82Ï€9.1×10-31kg3/26.63×10-34J.s=1.062×1056kg3/2/J3.s3=6.81×1027m-3.eV-2/3

Using the given data in equation (1), the density of states for the metal with energy E=8eVcan be calculated as follows:

NE=6.81×1027m-3.eV-2/38eV1/2=1.9×1028m-3.eV-1

This value of density of state is consistent with the given figure 41-6.

Hence, the value of the density of states is 1.9×1028m-3.eV-1.

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Most popular questions from this chapter

The energy gaps Egfor the semiconductors silicon and germanium are, respectively, 1.12 and 0.67eV . Which of the following statements, if any, are true? (a) Both substances have the same number density of charge carriers at room temperature. (b) At room temperature, germanium has a greater number density of charge carriers than silicon. (c) Both substances have a greater number density of conduction electrons than holes. (d) For each substance, the number density of electrons equals that of holes.

Calculate the number density (number per unit volume) for (a) molecules of oxygen gas at 0.0°Cand 1.0 atm pressure and (b) conduction electrons in copper. (c) What is the ratio of the latter to the former? What is the average distance between (d) the oxygen molecules and (e) the conduction electrons, assuming this distance is the edge length of a cube with a volume equal to the available volume per particle (molecule or electron)?

Pure silicon at room temperature has an electron number density in the conduction band of about 5.00×1015m-3and an equal density of holes in the valence band. Suppose that one of every 107silicon atoms is replaced by a phosphorus atom. (a) Which type will the doped semiconductor be, nor p? (b) What charge carrier number density will the phosphorus add? (c) What is the ratio of the charge carrier number density (electrons in the conduction band and holes in the valence band) in the doped silicon to that in pure silicon?

(a) Show that the density of states at the Fermi energy is given by

N(EF)=4(31/3)(π2/3)(mn1/3)h2=(4.11×1018m-2eV-1)n1/3

in which nis the number density of conduction electrons.

(b) Calculate N(EF)for copper, which is a monovalent metal with molar mass 63.54g/mol and density 8.96g/cm3.

Verify your calculation with the curve of Fig. 41-6, recalling that EF=7.0eV=for copper.

Silver is a monovalent metal. Calculate (a) the number density of conduction electrons, (b) the Fermi energy, (c) the Fermi speed and (d) the de Broglie wavelength corresponding to this electron speed. See Appendix F for the needed data on silver.

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