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Zinc is a bivalent metal. Calculate (a) the number density of conduction electrons, (b) the Fermi energy, (c) the Fermi speed, and (d) the de Broglie wavelength corresponding to this electron speed. See Appendix F for the needed data on zinc.

Short Answer

Expert verified
  1. The number density of conduction electrons is 1.31×1029m-3.
  2. The Fermi energy of Zinc is 9.42eV.
  3. The Fermi speed is 1.82x106m/s.
  4. The de-Broglie wavelength corresponding to this electron speed is 0.40 nm.

Step by step solution

01

The given data

  • Zinc is a bivalent metal, nconduction=2natom
  • Density of the zinc, d=7.133g/cm3
  • Molar mass of the zinc, A = 65.37 g/mol
02

Understanding the concept of electrical properties of metals

Using the given formula for the number density, we can get the required value of the conduction electrons per unit volume, considering the metal is bivalent. Now using this value in the equation of Fermi energy, we calculated the energy of the metal. Now, using this value of Fermi energy, we can get the speed of the electron in conduction band. Further, we can use this value of speed in the de-Broglie wavelength relation and get the value of the wavelength of the electron.

Formulae:

The number density of atoms per unit volume in a material,

n=2dA/NA............................(1)

whereNA=6.022×1023/mol

The equation of Fermi energy

EF=0.121h2men2/3.....................(2)

Where n is the number of conduction electrons per unit volume, meis the mass of an electron and is the Planck’s constant.

The energy of a system of a moving body,

E=12mevF2......................................(3)

The de-Broglie wavelength of the moving body,

λ=hmevF......................................(4)

Here vFis the Fermi speed of electrons.

03

a) Calculation of the number density of conduction electrons

Using the given data in equation (1), we can get the number density of conduction electrons in zinc (considering that zinc is bivalent) as follows:

n=2×7.133g/cm3×6.022×1023/mol65.37g/mol=1.31×1029m-3
Hence, the value of the number density is 1.31×1029m-3.

04

b) Calculation of the Fermi energy of Zinc

Using the above number density value in equation (2), we can get the required value of the Fermi energy as follows:

EF=0.1216.63×10-34J.s29.11×10-31kg1.6×10-19J/eV1.31×1029m-32/3=9.42eV

Hence, the value of the Fermi energy is 9.42 eV.

05

c) Calculation of the Fermi speed

We can equation the Fermi energy to energy of the light,mec2

Using the above energy value in equation (3) and equating this to the above energy value, we can get the value of the Fermi speed of the conduction electrons in zinc as follows:

vF=2EFc2mec2=29.42eV3×108m/s2511×103eV=1.82×106m/s

Hence, the value of the Fermi speed is 1.82×106m/s.

06

d) Calculation of the de-Broglie wavelength

Using the above speed value in equation (4), we can get the value of the de-Broglie wavelength as follows:

λF=6.63×10-34J.s9.11×10-31kg1.82×106m/s=0.40×10-9m=0.40nm

Hence, the value of the wavelength is 0.40 nm.

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Most popular questions from this chapter

The Fermi energy for copper is 7.00eV. For copper at 1000K, (a) find the energy of the energy level whose probability of being occupied by an electron is 0.900. For this energy, evaluate (b) the density of states N(E) and (c) the density of occupied states N0(E).

Doping changes the Fermi energy of a semiconductor. Consider silicon, with a gap of 1.11eV between the top of the valence band and the bottom of the conduction band. At 300K the Fermi level of the pure material is nearly at the mid-point of the gap. Suppose that silicon is doped with donor atoms, each of which has a state 0.15eV below the bottom of the silicon conduction band, and suppose further that doping raises the Fermi level to 0.11eV below the bottom of that band (Fig. 41-22). For (a) pure and (b) doped silicon, calculate the probability that a state at the bottom of the silicon conduction band is occupied. (c) Calculate the probability that a state in the doped material (at the donor level) is occupied.

For an ideal p-njunction rectifier with a sharp boundary between its two semiconducting sides, the current Iis related to the potential difference Vacross the rectifier by l=l0(eeV/kT-1), where l0, which depends on the materials but not on Ior V, is called the reverse saturation current.The potential difference Vis positive if the rectifier is forward-biased and negative if it is back-biased. (a) Verify that this expression predicts the behavior of a junction rectifier by graphing Iversus Vfrom to -12Vto+0.12V. Take T=300Kand l0=5.0nA. (b) For the same temperature, calculate the ratio of the current for a 0.50 V forward bias to the current for a 0.50 V back bias.

In a simplified model of an undoped semiconductor, the actual distribution of energy states may be replaced by one in which there are NVstates in the valence band, all having the same energyEV, andNCstates in the conduction band all these states having the same energyEc. The number of electrons in the conduction band equals the number of holes in the valence band.

  1. Show that this last condition implies that Ncexp(∆Ec/kT)+1=Nvexp(∆Ev/kT)+1in which∆Ec=∆Ec-∆EF and ∆Ev=-(∆Ev-∆EF).
  2. If the Fermi level is in the gap between the two bands and its distance from each band is large relative to kT then the exponentials dominate in the denominators. Under these conditions, show that EF=(Ec+Ev)2+kTIn(Nv+Nc)2and that ifNv≈Nc , the Fermi level for the undoped semiconductor is close to the gap’s center.

Use Eq. 41-9 to verify 7.0eV as copper’s Fermi energy.

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