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Carry out the Sommerfeld expansion for the energy integral (7.54), to obtain equation 7.67. Then plug in the expansion for μto obtain the final answer, equation 7.68.

Short Answer

Expert verified

The final answer, equation 7.68isU≈35NεF+π24NεF(kT2).

Step by step solution

01

Given information

We have been given that the energy integral 7.54isU =∫0∞εg(ε)n¯FD(ε)dε.

The Equation 7.67, U=35Nμ52εF32+3π28N(kT)2εF+.....and equation 7.68, U=35NεF+π24N(kT)2εF+.....are given.

We need to Carry out the Sommerfeld expansion for the energy integral 7.54to obtain equation 7.67. Then we have to plug in the expansion for μto obtain the final answer, equation 7.68.

02

Simplify

The given total energy integral 7.54is

localid="1650054588139" U=∫0∞εg(ε)n¯FD(ε)dε

localid="1650054613027" U=g0∫0∞ε32n¯FD(ε)dε

Integrating by parts, we get:

U=25g0ε53n¯FD|0∞-25g0∫0∞ε52∂n¯FD∂εdε (Let this equation be (1))

If we substitute ε=0, the integral will become zero(0)due to the dependence of the term on ε53and the first term vanishes. If we substitute with ∞, the exponential term in the denominator will grow faster than ε52.

So the equation (1) reduces to :

U=25g0∫0∞ε52∂n¯FD∂εdε (Let this equation be (2))

We know that n¯FD=1e(ε-μ)kT+1

By Taking derivative with respect to ε, we get

∂n¯FD∂ε=∂1e(ε-μ)kT+1∂ε

On simplifying,

we get∂n¯FD∂ε=-1kTe(ε-μ)kT(e(ε-μ)kT+1)2 (Let this equation be (3))

Let (ε-μ)kT=x, the equation (3) becomes :

dx=dεkT

Substitute dx,xand ∂n¯FD∂εin equation (2), we get

U=25g0∫0∞ε521kTex(ex+1)2kTdx

U=25g0∫0∞e52ex(ex+1)2dx (Let this equation be (4))

03

Finding the values of integrals.

As we need to change the integration boundaries also, so :

ε→∞x→∞ε→0x→-μkT

As kT≪μ, so we can put the lower limit of integral in equation (4) as -∞,

The integral in equation (4) becomes :

U=25g0∫-∞∞ε52ex(ex+1)2dx (Let this equation be (5))

Now expand the term ε52using Taylor series about μ,

ε52=μ52+52(ε-μ)μ32+158(ε-μ)2μ12+...

Substitute ε-μ=kTx,

ε52=μ52+52(kTx)μ32+158(kTx)2μ12+...

Substitute the value of ε52in equation (5), we get three integrals say I1,I2,I3,we get:

U=25g0(I1+I2+I3) (Let this equation be (6))

where,

I1=μ52∫-∞∞ex(ex+1)2dx

I2=52kTμ32∫-∞∞xex(ex+1)2dx

I3=158(kT)2μ12∫-∞∞x2ex(ex+1)2dx

Simplifying three integrals I1,I2,I3, we get :

I1=μ52

The second integral I2is odd integral, the integration of integral is from -∞to ∞, so the integral I2is directly zero .

I2=0

I3=158(kT)2μ12π23=5π28(kT)2μ12

04

Substituting the values of integrals 

By Substituting the values of the three integrals I1,I2,I3in equation (6), we get

U≈25g0μ52+5π28(kT)2μ12U≈25g0μ52+g0π24(kT)2μ12

Substitute g0=32NεF32, we get:

U≈35NεF32μ52+NεF323π28(kT)2μ12

Set μ=εFin second term, we get

U≈35NεF32μ52+NεF3π28(kT)2 (Let this equation be (7))

The equation (7.66) is given by:

μ52=εF521-π212kTεF252

By expanding the terms in the brackets, we get:

μ52=εF521-5π224kTεF2

Substitute the value of μ52in equation (7), we get:

U≈35NεF32εF521-5π224kTεF2+NεF3π28(kT)2

U≈35NεF1-5π224kTεF2+NεF3π28(kT)2

U≈35NεF-18Nπ2εFkTεF2+NεF3π28(kT)2

U≈35NεF-NεFπ28(kT)2+NεF3π28(kT)2

U≈35NεF+NεFπ2εFπ24(kT)2

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Most popular questions from this chapter

Use the results of this section to estimate the contribution of conduction electrons to the heat capacity of one mole of copper at room temperature. How does this contribution compare to that of lattice vibrations, assuming that these are not frozen out? (The electronic contribution has been measured at low temperatures, and turns out to be about40% more than predicted by the free electron model used here.)

Figure 7.37 shows the heat capacity of a Bose gas as a function of temperature. In this problem you will calculate the shape of this unusual graph.

(a) Write down an expression for the total energy of a gas of Nbosons confined to a volume V, in terms of an integral (analogous to equation 7.122).

(b) For T<Tcyou can set μ=0. Evaluate the integral numerically in this case, then differentiate the result with respect to Tto obtain the heat capacity. Compare to Figure 7.37.

(c) Explain why the heat capacity must approach 32Nkin the high- Tlimit.

(d) For T>Tcyou can evaluate the integral using the values of μcalculated in Problem 7.69. Do this to obtain the energy as a function of temperature, then numerically differentiate the result to obtain the heat capacity. Plot the heat capacity, and check that your graph agrees with Figure 7.37.

Figure 7.37. Heat capacity of an ideal Bose gas in a three-dimensional box.

At the surface of the sun, the temperature is approximately 5800 K.

(a) How much energy is contained in the electromagnetic radiation filling a cubic meter of space at the sun's surface?

(b) Sketch the spectrum of this radiation as a function of photon energy. Mark the region of the spectrum that corresponds to visible wavelengths, between 400 nm and 700 nm.

(c) What fraction of the energy is in the visible portion of the spectrum? (Hint: Do the integral numerically.)

Change variables in equation 7.83 to λ=hc/ϵ and thus derive a formula for the photon spectrum as a function of wavelength. Plot this spectrum, and find a numerical formula for the wavelength where the spectrum peaks, in terms of hc/kT. Explain why the peak does not occur at hc/(2.82kT).

When the attractive forces of the ions in a crystal are taken into account, the allowed electron energies are no longer given by the simple formula 7.36; instead, the allowed energies are grouped into bands, separated by gaps where there are no allowed energies. In a conductor the Fermi energy lies within one of the bands; in this section we have treated the electrons in this band as "free" particles confined to a fixed volume. In an insulator, on the other hand, the Fermi energy lies within a gap, so that at T = 0 the band below the gap is completely occupied while the band above the gap is unoccupied. Because there are no empty states close in energy to those that are occupied, the electrons are "stuck in place" and the material does not conduct electricity. A semiconductor is an insulator in which the gap is narrow enough for a few electrons to jump across it at room temperature. Figure 7 .17 shows the density of states in the vicinity of the Fermi energy for an idealized semiconductor, and defines some terminology and notation to be used in this problem.

(a) As a first approximation, let us model the density of states near the bottom of the conduction band using the same function as for a free Fermi gas, with an appropriate zero-point: g(ϵ)=g0ϵ-ϵc, where go is the same constant as in equation 7.51. Let us also model the density of states near the top

Figure 7.17. The periodic potential of a crystal lattice results in a densityof-states function consisting of "bands" (with many states) and "gaps" (with no states). For an insulator or a semiconductor, the Fermi energy lies in the middle of a gap so that at T = 0, the "valence band" is completely full while the-"conduction band" is completely empty. of the valence band as a mirror image of this function. Explain why, in this approximation, the chemical potential must always lie precisely in the middle of the gap, regardless of temperature.

(b) Normally the width of the gap is much greater than kT. Working in this limit, derive an expression for the number of conduction electrons per unit volume, in terms of the temperature and the width of the gap.

(c) For silicon near room temperature, the gap between the valence and conduction bands is approximately 1.11 eV. Roughly how many conduction electrons are there in a cubic centimeter of silicon at room temperature? How does this compare to the number of conduction electrons in a similar amount of copper?

( d) Explain why a semiconductor conducts electricity much better at higher temperatures. Back up your explanation with some numbers. (Ordinary conductors like copper, on the other hand, conduct better at low temperatures.) (e) Very roughly, how wide would the gap between the valence and conduction bands have to be in order to consider a material an insulator rather than a semiconductor?

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