Chapter 7: Q. 7.29 (page 285)
Carry out the Sommerfeld expansion for the energy integral , to obtain equation . Then plug in the expansion for to obtain the final answer, equation .
Short Answer
The final answer, equation is.
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Chapter 7: Q. 7.29 (page 285)
Carry out the Sommerfeld expansion for the energy integral , to obtain equation . Then plug in the expansion for to obtain the final answer, equation .
The final answer, equation is.
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Use the results of this section to estimate the contribution of conduction electrons to the heat capacity of one mole of copper at room temperature. How does this contribution compare to that of lattice vibrations, assuming that these are not frozen out? (The electronic contribution has been measured at low temperatures, and turns out to be about more than predicted by the free electron model used here.)
Figure 7.37 shows the heat capacity of a Bose gas as a function of temperature. In this problem you will calculate the shape of this unusual graph.
(a) Write down an expression for the total energy of a gas of bosons confined to a volume , in terms of an integral (analogous to equation 7.122).
(b) For you can set . Evaluate the integral numerically in this case, then differentiate the result with respect to to obtain the heat capacity. Compare to Figure 7.37.
(c) Explain why the heat capacity must approach in the high- limit.
(d) For you can evaluate the integral using the values of calculated in Problem 7.69. Do this to obtain the energy as a function of temperature, then numerically differentiate the result to obtain the heat capacity. Plot the heat capacity, and check that your graph agrees with Figure 7.37.

Figure 7.37. Heat capacity of an ideal Bose gas in a three-dimensional box.
At the surface of the sun, the temperature is approximately 5800 K.
(a) How much energy is contained in the electromagnetic radiation filling a cubic meter of space at the sun's surface?
(b) Sketch the spectrum of this radiation as a function of photon energy. Mark the region of the spectrum that corresponds to visible wavelengths, between 400 nm and 700 nm.
(c) What fraction of the energy is in the visible portion of the spectrum? (Hint: Do the integral numerically.)
Change variables in equation 7.83 to and thus derive a formula for the photon spectrum as a function of wavelength. Plot this spectrum, and find a numerical formula for the wavelength where the spectrum peaks, in terms of hc/kT. Explain why the peak does not occur at hc/(2.82kT).
When the attractive forces of the ions in a crystal are taken into account, the allowed electron energies are no longer given by the simple formula 7.36; instead, the allowed energies are grouped into bands, separated by gaps where there are no allowed energies. In a conductor the Fermi energy lies within one of the bands; in this section we have treated the electrons in this band as "free" particles confined to a fixed volume. In an insulator, on the other hand, the Fermi energy lies within a gap, so that at T = 0 the band below the gap is completely occupied while the band above the gap is unoccupied. Because there are no empty states close in energy to those that are occupied, the electrons are "stuck in place" and the material does not conduct electricity. A semiconductor is an insulator in which the gap is narrow enough for a few electrons to jump across it at room temperature. Figure 7 .17 shows the density of states in the vicinity of the Fermi energy for an idealized semiconductor, and defines some terminology and notation to be used in this problem.
(a) As a first approximation, let us model the density of states near the bottom of the conduction band using the same function as for a free Fermi gas, with an appropriate zero-point: , where go is the same constant as in equation 7.51. Let us also model the density of states near the top
Figure 7.17. The periodic potential of a crystal lattice results in a densityof-states function consisting of "bands" (with many states) and "gaps" (with no states). For an insulator or a semiconductor, the Fermi energy lies in the middle of a gap so that at T = 0, the "valence band" is completely full while the-"conduction band" is completely empty. of the valence band as a mirror image of this function. Explain why, in this approximation, the chemical potential must always lie precisely in the middle of the gap, regardless of temperature.
(b) Normally the width of the gap is much greater than kT. Working in this limit, derive an expression for the number of conduction electrons per unit volume, in terms of the temperature and the width of the gap.
(c) For silicon near room temperature, the gap between the valence and conduction bands is approximately 1.11 eV. Roughly how many conduction electrons are there in a cubic centimeter of silicon at room temperature? How does this compare to the number of conduction electrons in a similar amount of copper?
( d) Explain why a semiconductor conducts electricity much better at higher temperatures. Back up your explanation with some numbers. (Ordinary conductors like copper, on the other hand, conduct better at low temperatures.) (e) Very roughly, how wide would the gap between the valence and conduction bands have to be in order to consider a material an insulator rather than a semiconductor?

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