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Consider a free Fermi gas in two dimensions, confined to a square area A=L2•

(a) Find the Fermi energy (in terms of Nand A), and show that the average energy of the particles is ∈F2.

(b) Derive a formula for the density of states. You should find that it is a constant, independent of ∈.

(c) Explain how the chemical potential of this system should behave as a function of temperature, both when role="math" localid="1650186338941" kT≪∈Fand when Tis much higher.

(d) Because g∈is a constant for this system, it is possible to carry out the integral 7.53 for the number of particles analytically. Do so, and solve for μas a function of N. Show that the resulting formula has the expected qualitative behavior.

(e) Show that in the high-temperature limit, kT≫∈F, the chemical potential of this system is the same as that of an ordinary ideal gas.

Short Answer

Expert verified

(a) Fermi energy is, 12N∈Fand the average energy relation is given below.

(b) Density of states is, g∈=N∈F

(c) As the density state is constant, so the behavior of chemical properties is the same as the Fermi-Dirac distribution i.e. it will decrease continuously.

(d) Value of μis, μ=kTlne∈FkT-1

(e) Since, μ=-kTlnAN×2lQ2. Therefore, we can say that the chemical potential of this system is the same as that of an ordinary ideal gas.

Step by step solution

01

Part(a) Step 1: Given information

We have been given that,

A=L2

02

Part (a) Step 2: Simplify

In two dimensional case,

N=2∫0nmax∫0π/2ndndθ=π2nmax2

We know that,

∈F=h2nmax28mL2=h28mA×2Nπ∈F=h24Ï€³¾´¡N

Now, we can find the total energy U,

U=2∫0nmax∫0Ï€2ndndθ=Ï€2nmax2U=∫0∈F∈π8mAh2∈8mAh212∈d∈U=∫0∈F∈4Ï€³¾´¡h2d∈U=∫0∈F∈N∈Fd∈U=12N∈F

So, we can easily get average energy of the particles is UN=∈F2

03

Part (b) Step 1: Given information

We need to find out the density of states.

04

Part (b) Step 2: Simplify

From part (a),

Density of states is,

g∈=N∈F

That is independent of∈

05

Part (c) Step 1: Given information

We need to find out behavior of chemical properties

06

Part (c) Step 2: Simplify

Since the density of state is constant, the behavior of the chemical potential is the same as that of the Fermi-Dirac distribution. As we know that Fermi-Dirac distribution has some symmetrical property but when the energy difference from μis higher than the chemical potential, it gets broken because the occupancy is zero when ∈<0. So, the electrons with energy less than the Fermi energy are excited to a higher level than the Fermi energy with broken symmetry, which means that the number of electron loss with energy ∈<∈Fis lower than the number of electron gain with energy ∈>∈F.

To be sensible with the difference in no. of electrons, chemical potential should move i.e. Fermi-Dirac distribution has to move totally. As the number of electrons with energy ∈>∈Fis larger than ∈<∈F, so Fermi-Dirac distribution has to move on the left side with fixed ∈F, which means that the chemical potential decreases. When the temperature slightly grows up, then the difference in the number of electrons also grows up. So, the chemical potential will decrease continuously and at some point, it will have a negative value.

07

Part (d) Step 1: Given information

We need to find out value ofμ

08

Part (d) Step 2: Simplify

Since g(∈)is a constant, we can analytically integrate the equation,

N=∫0∞g∈1e∈-μkT+1d∈=N∈F∫0∞e-∈-μkT1+e-∈-μkTd∈=N∈F-kTln1+e-∈-μkT∈=0∈=∞=N∈FkTln1+eμkT

From this,

μ=kTln∈FkT-1=∈FwherekT≪∈FkTln∈FkTwherekT≫∈F

The second case is approximately and it will be negative value.

09

Part(e) Step 1: Given information

We need to find out that the chemical properties of this system is the same as that of an ordinary ideal gas

10

Part (e) Step 2: Simplify 

From the answer of part (d),

μ=kTln∈FkT=kTlnAN×4Ï€³¾°ì°Õh2=-kTlnAN×2lQ2

It seems to be the same form with the equation of chemical potential of an ordinary ideal gas.

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Most popular questions from this chapter

In Section 6.5 I derived the useful relation F=-kTln(Z)between the Helmholtz free energy and the ordinary partition function. Use analogous argument to prove that ϕ=-kT×ln(Z^), where Z^ is the grand partition function and ϕis the grand free energy introduced in Problem 5.23.

Carry out the Sommerfeld expansion for the energy integral (7.54), to obtain equation 7.67. Then plug in the expansion for μto obtain the final answer, equation 7.68.

Explain in some detail why the three graphs in Figure 7.28 all intercept the vertical axis in about the same place, whereas their slopes differ considerably.

Consider a system consisting of a single impurity atom/ion in a semiconductor. Suppose that the impurity atom has one "extra" electron compared to the neighboring atoms, as would a phosphorus atom occupying a lattice site in a silicon crystal. The extra electron is then easily removed, leaving behind a positively charged ion. The ionized electron is called a conduction electron because it is free to move through the material; the impurity atom is called a donor, because it can "donate" a conduction electron. This system is analogous to the hydrogen atom considered in the previous two problems except that the ionization energy is much less, mainly due to the screening of the ionic charge by the dielectric behavior of the medium.

(a) Write down a formula for the probability of a single donor atom being ionized. Do not neglect the fact that the electron, if present, can have two independent spin states. Express your formula in terms of the temperature, the ionization energy I, and the chemical potential of the "gas" of ionized electrons.

(b) Assuming that the conduction electrons behave like an ordinary ideal gas (with two spin states per particle), write their chemical potential in terms of the number of conduction electrons per unit volume,NcV.

(c) Now assume that every conduction electron comes from an ionized donor atom. In this case the number of conduction electrons is equal to the number of donors that are ionized. Use this condition to derive a quadratic equation for Ncin terms of the number of donor atoms Nd, eliminatingµ. Solve for Ncusing the quadratic formula. (Hint: It's helpful to introduce some abbreviations for dimensionless quantities. Tryx=NcNd,t=kTland so on.)

(d) For phosphorus in silicon, the ionization energy is localid="1650039340485" 0.044eV. Suppose that there are 1017patoms per cubic centimeter. Using these numbers, calculate and plot the fraction of ionized donors as a function of temperature. Discuss the results.

For a system of bosons at room temperature, compute the average occupancy of a single-particle state and the probability of the state containing 0,1,2,3bosons, if the energy of the state is

(a) 0.001eVgreater than μ

(b) 0.01eVgreater than μ

(c) 0.1eVgreater than μ

(d) 1eVgreater than μ

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