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Imagine that there exists a third type of particle, which can share a single-particle state with one other particle of the same type but no more. Thus the number of these particles in any state can be 0,1 or 2 . Derive the distribution function for the average occupancy of a state by particles of this type, and plot the occupancy as a function of the state's energy, for several different temperatures.

Short Answer

Expert verified

The distribution function for the average occupancy of a state by given types of particles is derived.

The graph is as follows,

Step by step solution

01

Step 1. Given Information 

We are given a particle that can share a single-particle state with one other particle of the same type but no more and the number of these particles in any state can be 0,1or 2.

02

Step 2. Grand partition function

The grand partition function or Gibbs sum is,

Z=∑ne-n(ϵ-μ)kT

According to the given problem, the number of particles of third type in any state can be 0,1or 2. That is n can be 0,1or2.

Z=∑n=02exp-n(ε-μ)kTZ=exp(0)+exp-(ε-μ)kT+exp-2(ε-μ)kTZ=1+exp-(ε-μ)kT+exp-2(ε-μ)kT

03

Step 3. Probability of n- particals

Let x=exp-(ε-μ)kT,

Z=1+x+x2

The probability of state being occupied by n-particles is,

P(n)=1Zexp-n(ε-μ)kT=1ZxnP(n)=xn1+x+x2

04

Step 4. Average occupancy of state by particles 

The average occupancy of state by particles of this type is,

n¯=∑n=02nP(n)=0·P(0)+1·P(1)+2·P(2)=1·x11+x+x2+2·x21+x+x2n¯=x+2x21+x+x2

So, the distribution function for the number of these particles in any state can be 0,1or 2is,

n=x+2x21+x+x2x=exp-(ε-μ)kT

05

Step 5. Graphing the occupancy as a function of the state's energy 

The graph is as follows,

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Most popular questions from this chapter

Consider a system of five particles, inside a container where the allowed energy levels are nondegenerate and evenly spaced. For instance, the particles could be trapped in a one-dimensional harmonic oscillator potential. In this problem you will consider the allowed states for this system, depending on whether the particles are identical fermions, identical bosons, or distinguishable particles.

(a) Describe the ground state of this system, for each of these three cases.

(b) Suppose that the system has one unit of energy (above the ground state). Describe the allowed states of the system, for each of the three cases. How many possible system states are there in each case?

(c) Repeat part (b) for two units of energy and for three units of energy.

(d) Suppose that the temperature of this system is low, so that the total energy is low (though not necessarily zero). In what way will the behavior of the bosonic system differ from that of the system of distinguishable particles? Discuss.

Evaluate the integral in equation N=2π2πmh23/2V∫0∞ϵdϵeϵ/kT-1numerically, to confirm the value quoted in the text.

Although the integrals (7.53and 7.54) forNand Ucannot be

carried out analytically for all T, it's not difficult to evaluate them numerically

using a computer. This calculation has little relevance for electrons in metals (for

which the limit kT<<EFis always sufficient), but it is needed for liquid H3eand

for astrophysical systems like the electrons at the center of the sun.

(a) As a warm-up exercise, evaluate theNintegral (7.53) for the casekT=εF

and μ=0, and check that your answer is consistent with the graph shown

above. (Hint: As always when solving a problem on a computer, it's best to

first put everything in terms of dimensionless variables. So let t=kTεFrole="math" localid="1649996205331" ,c=μεF

, and x=εkT. Rewrite everything in terms of these variables,

and then put it on the computer.)

(b) The next step is to varyμ holdingT fixed, until the integral works out to

the desired value,N. Do this for values of kTεFranging from 0.1 up to 2,

and plot the results to reproduce Figure7.16. (It's probably not a good idea

to try to use numerical methods when kTεF is much smaller than 0.1, since

you can start getting overflow errors from exponentiating large numbers.

But this is the region where we've already solved the problem analytically.)

(c) Plug your calculated values ofµ into the energy integral (7.54), and evaluate

that integral numerically to obtain the energy as a function of temperature

forkTup to 2εF Plot the results, and evaluate the slope to obtain the

heat capacity. Check that the heat capacity has the expected behavior at

both low and high temperatures.

Compute the quantum volume for an N2molecule at room temperature, and argue that a gas of such molecules at atmospheric pressure can be

treated using Boltzmann statistics. At about what temperature would quantum statistics become relevant for this system (keeping the density constant and pretending that the gas does not liquefy)?

Consider a system consisting of a single impurity atom/ion in a semiconductor. Suppose that the impurity atom has one "extra" electron compared to the neighboring atoms, as would a phosphorus atom occupying a lattice site in a silicon crystal. The extra electron is then easily removed, leaving behind a positively charged ion. The ionized electron is called a conduction electron because it is free to move through the material; the impurity atom is called a donor, because it can "donate" a conduction electron. This system is analogous to the hydrogen atom considered in the previous two problems except that the ionization energy is much less, mainly due to the screening of the ionic charge by the dielectric behavior of the medium.

(a) Write down a formula for the probability of a single donor atom being ionized. Do not neglect the fact that the electron, if present, can have two independent spin states. Express your formula in terms of the temperature, the ionization energy I, and the chemical potential of the "gas" of ionized electrons.

(b) Assuming that the conduction electrons behave like an ordinary ideal gas (with two spin states per particle), write their chemical potential in terms of the number of conduction electrons per unit volume,NcV.

(c) Now assume that every conduction electron comes from an ionized donor atom. In this case the number of conduction electrons is equal to the number of donors that are ionized. Use this condition to derive a quadratic equation for Ncin terms of the number of donor atoms Nd, eliminatingµ. Solve for Ncusing the quadratic formula. (Hint: It's helpful to introduce some abbreviations for dimensionless quantities. Tryx=NcNd,t=kTland so on.)

(d) For phosphorus in silicon, the ionization energy is localid="1650039340485" 0.044eV. Suppose that there are 1017patoms per cubic centimeter. Using these numbers, calculate and plot the fraction of ionized donors as a function of temperature. Discuss the results.

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