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Consider a system consisting of a single impurity atom/ion in a semiconductor. Suppose that the impurity atom has one "extra" electron compared to the neighboring atoms, as would a phosphorus atom occupying a lattice site in a silicon crystal. The extra electron is then easily removed, leaving behind a positively charged ion. The ionized electron is called a conduction electron because it is free to move through the material; the impurity atom is called a donor, because it can "donate" a conduction electron. This system is analogous to the hydrogen atom considered in the previous two problems except that the ionization energy is much less, mainly due to the screening of the ionic charge by the dielectric behavior of the medium.

(a) Write down a formula for the probability of a single donor atom being ionized. Do not neglect the fact that the electron, if present, can have two independent spin states. Express your formula in terms of the temperature, the ionization energy I, and the chemical potential of the "gas" of ionized electrons.

(b) Assuming that the conduction electrons behave like an ordinary ideal gas (with two spin states per particle), write their chemical potential in terms of the number of conduction electrons per unit volume,NcV.

(c) Now assume that every conduction electron comes from an ionized donor atom. In this case the number of conduction electrons is equal to the number of donors that are ionized. Use this condition to derive a quadratic equation for Ncin terms of the number of donor atoms Nd, eliminatingµ. Solve for Ncusing the quadratic formula. (Hint: It's helpful to introduce some abbreviations for dimensionless quantities. Tryx=NcNd,t=kTland so on.)

(d) For phosphorus in silicon, the ionization energy is localid="1650039340485" 0.044eV. Suppose that there are 1017patoms per cubic centimeter. Using these numbers, calculate and plot the fraction of ionized donors as a function of temperature. Discuss the results.

Short Answer

Expert verified

(a) The formula for the probability of a single donor atom being ionized is Ps=11+2eI+μ/kT.

(b) The chemical potential in terms of the number of conduction electrons per unit volume, NcVfor μ=−kTln2VNcvQ.

(c) For Ncusing formula is Nc=Ve−I/kT2vQ1+8eI/kTvQNd2V−1

(d) The plot of fraction of ionized donors as a function of temperature is

Step by step solution

01

Part (a) step 1: Given Information

We need to find a formula for the probability of a single donor atom being ionized.

02

Part (a) step 2: Simplify

Gibbs factor is given as:

Ps=e-ε-μkT

Consider a system that consists of a single impurity (atom/ion) which has three possible states, one is an unoccupied state and the other two are occupied states (spin up and spin down):

  • Unoccupied state:
    in this case the chemical potential is zero and the energy of the state is zero also, so the Gibbs factor is:

Ps=e−0−0/kT=1

  • Occupied state (when the electron in the ground state):
    in this case substitute with ionization energy -Iinto ε(note that we multiply the factor by 2since we have two electrons):

P's=2eI+μ/kT

The Grand partition function is the sum of the two Gibbs factors, that is:

localid="1650885202394" role="math" Z=1+2eI+μ/kT

The probability that the donor atom is ionized equals it's Gibbs factor divided by the Grand partition function:

localid="1650885211600" role="math" Ps=PsZ=11+2eI+μ/kTPs=11+2eI+μ/kT

03

Part (b) step 1: Given Information 

We need to find the number of conduction electrons per unit volume,NcV.

04

Part (b) step 2: Simplify

The chemical potential is given by the equation 6.93 as :

μ=−kTlnVZintNcvQ

the internal partition function is 2because we have two spin states, so the chemical potential can be reduced to:

μ=−kTln2VNcvQ

05

Part (c) step 1: Given Information 

We need to solve for Ncusing the quadratic formula.

06

Part (c) step 2: Simplify

If every conduction electron comes from an ionized donor, then probability that the donor atom has is:

Ps=NcNd

use the result of part (a) to get:

NcNd=11+2eI+μ/kTNcNd=11+2eI/kTeμ/kT...(1)

now we need to use the results of part (b), as follow:

−μkT=ln2VNcvQeμ/kT=2VNv

07

Part (c) step 3: Calculation 

Substitute into (1) get:

NcNd=11+2eIkTNcvQ2VNcNd=11+aNc

where,

a=2eI/kTvQ2V

therefore,
aNc2+Nc=NdaNc2+Nc−Nd=0

this is a quadratic equation which can be solved using the general law, so:

Nc=−1±1+4aNd2aNc=−1±1+8eI/kTvQNd2V4eI/kTvQ2V

the number of conduction electrons is always positive, so:
=1+8eI/kTvQNd2V−14eI/kTvQ2VNc=Ve−I/kT2vQ1+8eI/kTvQNd2V−1

08

Part (d) step 1: Given Information

We need to calculate and plot the fraction of ionized donors as a function of temperature.

09

Part (d) step 2: Simplify

The quantum value is given as:

vQ=h22Ï€mkT3/2

the mass of the phosphorus atom is 31u, where u=1.66×10−27kgsubstitute with the givens to get (that h=6.6×10-34J.sand k=1.38×10-23J.k)

vQ=6.626×10−34J⋅s22π31×1.66×10−27kg1.38×10−23J/KT3/2=3.086×10−29T−3/2m3/K3/2

now we need to simplify the result of part (c), the solution of the equation is:

Nc=1+4aNd−12a

using the expansion:

1+x≈1+x2−x28

With x=4aNd, then:

Nc=12a4aNd2−4aNd28Nc=Nd−aNd2NcNd=1−aNdNcNd=1−2eI/kTvQNd2V

10

Part (d) step 3: Calculation

Suppose we have 1017Patoms per cm3:

NdV=1×1023atom/m3

and the ionization energy for phosphorus in silicon is I=0.044eVsubstitute intoNc/Ndget:

NcNd=1−e0.044eV/8.62×10−5eV/KT1×1023×3.086×10−29T3/2NcNd=1−e510.44K/T3.086×10−6T3/2

11

Part (d) 4: Simplify

To plot this function I used python, and the code is shown in the following picture:

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Most popular questions from this chapter

Figure 7.37 shows the heat capacity of a Bose gas as a function of temperature. In this problem you will calculate the shape of this unusual graph.

(a) Write down an expression for the total energy of a gas of Nbosons confined to a volume V, in terms of an integral (analogous to equation 7.122).

(b) For T<Tcyou can set μ=0. Evaluate the integral numerically in this case, then differentiate the result with respect to Tto obtain the heat capacity. Compare to Figure 7.37.

(c) Explain why the heat capacity must approach 32Nkin the high- Tlimit.

(d) For T>Tcyou can evaluate the integral using the values of μcalculated in Problem 7.69. Do this to obtain the energy as a function of temperature, then numerically differentiate the result to obtain the heat capacity. Plot the heat capacity, and check that your graph agrees with Figure 7.37.

Figure 7.37. Heat capacity of an ideal Bose gas in a three-dimensional box.

The speed of sound in copper is 3560m/s. Use this value to calculate its theoretical Debye temperature. Then determine the experimental Debye temperature from Figure 7.28, and compare.

Use the results of this section to estimate the contribution of conduction electrons to the heat capacity of one mole of copper at room temperature. How does this contribution compare to that of lattice vibrations, assuming that these are not frozen out? (The electronic contribution has been measured at low temperatures, and turns out to be about40% more than predicted by the free electron model used here.)

Use the formula P=-(∂U/∂V)S,N to show that the pressure of a photon gas is 1/3 times the energy density (U/V). Compute the pressure exerted by the radiation inside a kiln at 1500 K, and compare to the ordinary gas pressure exerted by the air. Then compute the pressure of the radiation at the centre of the sun, where the temperature is 15 million K. Compare to the gas pressure of the ionised hydrogen, whose density is approximately 105 kg/m3.

Carry out the Sommerfeld expansion for the energy integral (7.54), to obtain equation 7.67. Then plug in the expansion for μto obtain the final answer, equation 7.68.

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