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For a brief time in the early universe, the temperature was hot enough to produce large numbers of electron-positron pairs. These pairs then constituted a third type of "background radiation," in addition to the photons and neutrinos (see Figure 7.21). Like neutrinos, electrons and positrons are fermions. Unlike neutrinos, electrons and positrons are known to be massive (ea.ch with the same mass), and each has two independent polarization states. During the time period of interest, the densities of electrons and positrons were approximately equal, so it is a good approximation to set the chemical potentials equal to zero as in Figure 7.21. When the temperature was greater than the electron mass times c2k, the universe was filled with three types of radiation: electrons and positrons (solid arrows); neutrinos (dashed); and photons (wavy). Bathed in this radiation were a few protons and neutrons, roughly one for every billion radiation particles. the previous problem. Recall from special relativity that the energy of a massive particle is ϵ=(pc)2+mc22.

(a) Show that the energy density of electrons and positrons at temperature Tis given by

u(T)=∫0∞x2x2+mc2/kT2ex2+mc2/kT2+1dx;whereu(T)=∫0∞x2x2+mc2/kT2ex2+mc2/kT2+1dx

(b) Show that u(T)goes to zero when kT≪mc2, and explain why this is a

reasonable result.

( c) Evaluate u(T)in the limit kT≫mc2, and compare to the result of the

the previous problem for the neutrino radiation.

(d) Use a computer to calculate and plot u(T)at intermediate temperatures.

(e) Use the method of Problem 7.46, part (d), to show that the free energy

density of the electron-positron radiation is

FV=-16π(kT)4(hc)3f(T);wheref(T)=∫0∞x2ln1+e-x2+mc2/kT2dx

Evaluate f(T)in both limits, and use a computer to calculate and plot f(T)at intermediate

temperatures.

(f) Write the entropy of the electron-positron radiation in terms of the functions

uTand f(T). Evaluate the entropy explicitly in the high-T limit.

Short Answer

Expert verified

(a). The energy density of electrons is U=16Ï€(kT)4V(hc)3u(T)

(b). By observing the graph, it can be concluded that the result is reasonable.

(c). The result of the neutrino radiation

U=14Ï€5V(kT)415(hc)3

(d). The plot at intermediate temperatures is

(e). Since, FV=-16Ï€(kT)4(hc)3f(T). Hence, Proved.

(f). The entropy of the electron-positron radiation F=-16Ï€V(kT)4(hc)3f(T).

Step by step solution

01

Part(a) Step 1: Given information

We have to prove that energy density of electron and positrons is given byu(T)=∫0∞x2x2+mc2/kT2ex2+mc2/kT2+1dx

02

Part(a) Step 2: Solution

Probability of any single state state to be occupiedn¯FD=1eϵ/kT+1

Total energy equalsU=2·2∑nx∑ny∑nzϵn¯FD

Energy of massive particleϵ=(pc)2+mc22

U=4∑nx,ny,nz(pc)2+mc22e(pc)2+mc22/kT+1

Changing sum to integral U=4∫0π/2dΦ∫0π/2sin(θ)dθ∫0∞n2(pc)2+mc22e(pc)2+mc22/kT+1dn

U=2π∫0∞n2(hcn/2L)2+mc22e(hcn/2L)2+mc22/kT+1dn

U=2π2LkThc3∫0∞x2(xkT)2+mc22e(xkT)2+mc22/kT+1dx

U=16π(kT)4V(hc)3u(T)whereu(T)=∫0∞x2x2+mc2/kT2ex2+mc2/kT2+1dx

03

Part(b) Step 1: Given information:

We have to Evaluate :u(T→0)=0

04

Part(b)  Step 2: Simplify

u(T)=∫0∞x3ex+1dx

∫0∞x3ex+1dx=7π4120

U=14Ï€5V(kT)415(hc)3

05

Part(c) Step 1: Given information

We have been given that u(T)=∫0∞x2x2+(1/t)2ex2+(1/t)2+1dx

06

Part(c) Step 2:Simplify

To plot the function,we get graph

07

Part(d) Step 1: given information

we have been given thatF=-kTln(Z)

08

Part(d) Step 2: Simplify

F=-4∑nx∑ny∑nzkTln1+e-ϵ/kT=-4∑nx,ny,nzkTln1+e-ϵ/kT

ϵ=(pc)2+mc22

F=-16Ï€V(kT)4(hc)3f(T)

09

Part(e) Step 1:Given information

Se have been given thatF=-kTln1+e-ϵ/kT

10

Part(e) Step 2:Simplify

The spherical coordinator is

F=-4kT∫0π/2dΦ∫0π/2sin(θ)dθ∫0∞n2ln1+e-ϵ/kTdn

ϵ=(pc)2+mc22

11

Prt(f) Step 1:Given information

We have been thatF=-16Ï€V(kT)4(hc)3f(T)

12

Part(f) Step 2:Simplify

The Helmotz free energy us

S=16Ï€V(kT)3(hc)3(u(T)+f(T))k

S=56Ï€5V(kT)345(hc)3k

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Most popular questions from this chapter


Fill in the steps to derive equations 7.112and7.117.

When the attractive forces of the ions in a crystal are taken into account, the allowed electron energies are no longer given by the simple formula 7.36; instead, the allowed energies are grouped into bands, separated by gaps where there are no allowed energies. In a conductor the Fermi energy lies within one of the bands; in this section we have treated the electrons in this band as "free" particles confined to a fixed volume. In an insulator, on the other hand, the Fermi energy lies within a gap, so that at T = 0 the band below the gap is completely occupied while the band above the gap is unoccupied. Because there are no empty states close in energy to those that are occupied, the electrons are "stuck in place" and the material does not conduct electricity. A semiconductor is an insulator in which the gap is narrow enough for a few electrons to jump across it at room temperature. Figure 7 .17 shows the density of states in the vicinity of the Fermi energy for an idealized semiconductor, and defines some terminology and notation to be used in this problem.

(a) As a first approximation, let us model the density of states near the bottom of the conduction band using the same function as for a free Fermi gas, with an appropriate zero-point: g(ϵ)=g0ϵ-ϵc, where go is the same constant as in equation 7.51. Let us also model the density of states near the top

Figure 7.17. The periodic potential of a crystal lattice results in a densityof-states function consisting of "bands" (with many states) and "gaps" (with no states). For an insulator or a semiconductor, the Fermi energy lies in the middle of a gap so that at T = 0, the "valence band" is completely full while the-"conduction band" is completely empty. of the valence band as a mirror image of this function. Explain why, in this approximation, the chemical potential must always lie precisely in the middle of the gap, regardless of temperature.

(b) Normally the width of the gap is much greater than kT. Working in this limit, derive an expression for the number of conduction electrons per unit volume, in terms of the temperature and the width of the gap.

(c) For silicon near room temperature, the gap between the valence and conduction bands is approximately 1.11 eV. Roughly how many conduction electrons are there in a cubic centimeter of silicon at room temperature? How does this compare to the number of conduction electrons in a similar amount of copper?

( d) Explain why a semiconductor conducts electricity much better at higher temperatures. Back up your explanation with some numbers. (Ordinary conductors like copper, on the other hand, conduct better at low temperatures.) (e) Very roughly, how wide would the gap between the valence and conduction bands have to be in order to consider a material an insulator rather than a semiconductor?

Evaluate the integral in equation N=2π2πmh23/2V∫0∞ϵdϵeϵ/kT-1numerically, to confirm the value quoted in the text.

Explain in some detail why the three graphs in Figure 7.28 all intercept the vertical axis in about the same place, whereas their slopes differ considerably.

Use the results of this section to estimate the contribution of conduction electrons to the heat capacity of one mole of copper at room temperature. How does this contribution compare to that of lattice vibrations, assuming that these are not frozen out? (The electronic contribution has been measured at low temperatures, and turns out to be about40% more than predicted by the free electron model used here.)

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