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The Sommerfeld expansion is an expansion in powers of kTεF, which is assumed to be small. In this section I kept all terms through order kTεF2, omitting higher-order terms. Show at each relevant step that the term proportional to localid="1650117451748" T3is zero, so that the next nonvanishing terms in the expansions forlocalid="1650117470867" μand localid="1650117476821" Uare proportional to localid="1650117458596" T4. (If you enjoy such things, you might try evaluating the localid="1650117464980" T4terms, possibly with the aid of a computer algebra program.)

Short Answer

Expert verified

At each step the term proportional to T3is zero and the next nonvanishing terms in the expansion for μand Uare proportional to T4in the proof of expressionU≈25g0μ52+5π28(kT)2μ12+7π4384(kT)4μ-32

Step by step solution

01

Given information

We have been given that the Sommerfeld expansion is an expansion in powers of kTεF, which is assumed to be small and we kept all terms through order kTεF2, omitting higher-order terms.

We need to show at each relevant step that the term proportional to role="math" localid="1650117659810" T3is zero, so that the next nonvanishing terms in the expansions forμandU are proportional toT4.

02

Simplify

The total energy given by the integral 7.54is:

U=∫0∞εg(ε)n¯FD(ε)dε

U=g0∫0∞ε32n¯FD(ε)dε

Integrating by parts, we get:

U=25g0ε53n¯FD|0∞+25g0∫0∞ε52∂n¯FD∂εdε (Let this equation be (1))

If we substitute ε=0, the integral becomes zero due to the dependence of the term on ε53and the first term vanishes.

On simplifying, the equation (1) becomes:

U=25g0∫0∞ε52∂n¯FD∂εdε (Let this equation be (2))

We know that n¯FD=1e(ε-μ)kT+1

Taking derivative with respect to ε, we get:

∂n¯FD∂ε=∂1e(ε-μ)kT+1∂ε

On simplifying, we get:

∂n¯FD∂ε=1kTe(ε-μ)kTe(ε-μ)kT+12

Let localid="1650119493586" (ε-μ)kT=x, then we can write as :

dx=dεkT

Substitute dx,x,∂n¯FD∂εin equation (2), we get:
U=25g0∫0∞ε521kTex(ex+1)2kTdx

U=25g0∫0∞ε52ex(ex+1)2dx

03

Changing the limits of integration

We need to change the boundaries of integration, so:

ε→∞x→∞ε→0x→-μkT

As kT≪μ, so we can put -∞as the lower limit of integral, so the integral will become:

U=25g0∫-∞∞ε52ex(ex+1)2dx (Let this equation be (3))

Now by expanding the term ε52about μusing Taylor series, we get:

ε52=μ52+52(ε-μ)μ32+516(ε-μ)2μ12+5128(ε-μ)3μ-12+158(ε-μ)4μ-32...

Substitute ε-μ=kTx, we get:

ε52=μ52+52(kTx)μ32+158(kTx)2μ12+516(kTx)2μ-12+5128(kTx)2μ-32...

04

Finding the values of integrals 

Substitute the value of ε52in equation (3), we get three integral say I1,I2,I3:

U=25g0(I1+I2+I3+I4+I5) (Let this equation be (4))

where, I1=μ52∫-∞∞ex(ex+1)2dx

I2=52kTμ32∫-∞∞xex(ex+1)2dx

I3=158(kT)2μ12∫-∞∞x2ex(ex+1)2dx

I4=516(kT)3μ-12∫-∞∞x3ex(ex+1)2dx

I5=5128(kT)4μ-32∫-∞∞x4ex(ex+1)2dx

On simplifying I1,I2,I3,I4,I5, we get:

role="math" localid="1650601109788" I1=μ52I2=0I3=5π28(kT)2μ12I4=0I5=7π4384(kT)4μ-32

Substituting I1,I2,I3,I4,I5in equation (4), we get:

U≈25g0μ52+5π28(kT)2μ12+7π2384(kT)4μ-32

We have proved that the proportional term to T3is zero. We can also evaluate the further terms using computer algebra program, if wanted.

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At the surface of the sun, the temperature is approximately 5800 K.

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(b) Sketch the spectrum of this radiation as a function of photon energy. Mark the region of the spectrum that corresponds to visible wavelengths, between 400 nm and 700 nm.

(c) What fraction of the energy is in the visible portion of the spectrum? (Hint: Do the integral numerically.)

Consider a system consisting of a single impurity atom/ion in a semiconductor. Suppose that the impurity atom has one "extra" electron compared to the neighboring atoms, as would a phosphorus atom occupying a lattice site in a silicon crystal. The extra electron is then easily removed, leaving behind a positively charged ion. The ionized electron is called a conduction electron because it is free to move through the material; the impurity atom is called a donor, because it can "donate" a conduction electron. This system is analogous to the hydrogen atom considered in the previous two problems except that the ionization energy is much less, mainly due to the screening of the ionic charge by the dielectric behavior of the medium.

(a) Write down a formula for the probability of a single donor atom being ionized. Do not neglect the fact that the electron, if present, can have two independent spin states. Express your formula in terms of the temperature, the ionization energy I, and the chemical potential of the "gas" of ionized electrons.

(b) Assuming that the conduction electrons behave like an ordinary ideal gas (with two spin states per particle), write their chemical potential in terms of the number of conduction electrons per unit volume,NcV.

(c) Now assume that every conduction electron comes from an ionized donor atom. In this case the number of conduction electrons is equal to the number of donors that are ionized. Use this condition to derive a quadratic equation for Ncin terms of the number of donor atoms Nd, eliminatingµ. Solve for Ncusing the quadratic formula. (Hint: It's helpful to introduce some abbreviations for dimensionless quantities. Tryx=NcNd,t=kTland so on.)

(d) For phosphorus in silicon, the ionization energy is localid="1650039340485" 0.044eV. Suppose that there are 1017patoms per cubic centimeter. Using these numbers, calculate and plot the fraction of ionized donors as a function of temperature. Discuss the results.

Consider a system consisting of a single impurity atom/ion in a semiconductor. Suppose that the impurity atom has one "extra" electron compared to the neighboring atoms, as would a phosphorus atom occupying a lattice site in a silicon crystal. The extra electron is then easily removed, leaving behind a positively charged ion. The ionized electron is called a conduction electron, because it is free to move through the material; the impurity atom is called a donor, because it can "donate" a conduction electron. This system is analogous to the hydrogen atom considered in the previous two problems except that the ionization energy is much less, mainly due to the screening of the ionic charge by the dielectric behavior of the medium.

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