Chapter 14: Problem 9
Define the segregation coefficient.
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Chapter 14: Problem 9
Define the segregation coefficient.
These are the key concepts you need to understand to accurately answer the question.
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Calculate the junction depth and the total amount of dopant introduced after boron predeposition performed at \(950^{\circ} \mathrm{C}\) for 30 minutes in a neutral ambient. Assume the substrate is \(n\)-type silicon with \(N_{D}=1.8 \times 10^{16} \mathrm{~cm}^{-3}\) and the boron surface concentration is \(C_{S}=1.8 \times 10^{20} \mathrm{~cm}^{-3}\).
A silicon \(p-n\) junction is formed by implanting boron ions at \(80 \mathrm{keV}\) through a window in an oxide. If the boron dose is \(2 \times 10^{15} \mathrm{~cm}^{-2}\) and the \(n\)-type substrate concentration is \(10^{15} \mathrm{~cm}^{3}\), find the location of the metallurgical junction.
Assume the measured phosphorus profile can be represented by a Gaussian function with a diffusivity \(D=2.3 \times 10^{-13}\) \(\mathrm{cm}^{2} / \mathrm{s}\). The measured surface concentration is \(1 \times 10^{18}\) atoms/cm \(^{3}\) and the measured junction depth is \(1 \mu \mathrm{m}\) at a substrate concentration of \(1 \times 10^{15}\). Calculate the diffusion time and the total dopant in the diffused layer.
Assume that a \(100 \mathrm{~mm}\) diameter GaAs wafer is uniformly implanted with \(100 \mathrm{keV}\) zinc ions for 5 minutes with a constant ion beam current of \(10 \mu \mathrm{A}\). What are the ion dose per unit area and the peak ion concentration?
Explain the meaning of intrinsic and extrinsic diffusion.
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