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The occupancy probability at certain energy E1in the valence band of a metal is 0.60 when the temperature is 300 K. IsE1 above or below the Fermi energy?

Short Answer

Expert verified

The energy level is below the Fermi level.

Step by step solution

01

The given data

  1. The occupancy probability of the metal at energy,E1,PE1=0.60
  2. The temperature value, T = 300 K
02

Step 2:

Using the equation of the occupancy probability of a certain material at a given energy, we can get the energy difference value, for the given values of probability and temperature. Now, if the net energy difference is positive that indicates that the energy level is above the Fermi energy, while the negative energy difference indicates that the Fermi level is above the given energy.

Formula:

The occupancy probability for a level in a band is given as,

PE=1eE1-EF/kT+1 (i)

Here,E1 is the given energy level,EF is the Fermi level, T is the absolute temperature, and k is the Boltzmann constant.

03

Calculation of the Fermi energy level

Let, the energy difference be given as, E1-EF=∆E.

Now, from equation the energy difference is given as-

∆E=kTln1P-1=1.38×10-23J/K300Kln10.6-1=-1.67×10-21J=-0.0104eV

E1-EF<0E1<EF

Hence, the energy level is below the Fermi energy level of the metal.

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Most popular questions from this chapter

Show that Eq. 41-9 can be written as EF=An2/3where the constant Ahas the value 3.65×10-19m2eV.

The occupancy probability function (Eq. 41-6) can be applied to semiconductors as well as to metals. In semiconductors the Fermi energy is close to the midpoint of the gap between the valence band and the conduction band. For germanium, the gap width is 0.67eV. What is the probability that (a) a state at the bottom of the conduction band is occupied and (b) a state at the top of the valence band is not occupied? Assume that T = 290K. (Note:In a pure semiconductor, the Fermi energy lies symmetrically between the population of conduction electrons and the population of holes and thus is at the center of the gap. There need not be an available state at the location of the Fermi energy.)

Pure silicon at room temperature has an electron number density in the conduction band of about 5.00×1015m-3and an equal density of holes in the valence band. Suppose that one of every 107silicon atoms is replaced by a phosphorus atom. (a) Which type will the doped semiconductor be, nor p? (b) What charge carrier number density will the phosphorus add? (c) What is the ratio of the charge carrier number density (electrons in the conduction band and holes in the valence band) in the doped silicon to that in pure silicon?

In Eq. 41-6 let, E-EF=∆E=1.00eV. (a) At what temperature does the result of using this equation differ by 1% from the result of using the classical Boltzmann equation P(E)=e-∆E/kT(which is Eq. 41-1 with two changes in notation)? (b) At what temperature do the results from these two equations differ by 10%?

In a silicon lattice, where should you look if you want to find (a) a conduction electron, (b) a valence electron, and (c) an electron associated with the 2psubshell of the isolated silicon atom?

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