Chapter 41: Q5Q (page 1272)
The occupancy probability at certain energy in the valence band of a metal is 0.60 when the temperature is 300 K. Is above or below the Fermi energy?
Short Answer
The energy level is below the Fermi level.
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Chapter 41: Q5Q (page 1272)
The occupancy probability at certain energy in the valence band of a metal is 0.60 when the temperature is 300 K. Is above or below the Fermi energy?
The energy level is below the Fermi level.
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Show that Eq. 41-9 can be written as where the constant Ahas the value .
The occupancy probability function (Eq. 41-6) can be applied to semiconductors as well as to metals. In semiconductors the Fermi energy is close to the midpoint of the gap between the valence band and the conduction band. For germanium, the gap width is 0.67eV. What is the probability that (a) a state at the bottom of the conduction band is occupied and (b) a state at the top of the valence band is not occupied? Assume that T = 290K. (Note:In a pure semiconductor, the Fermi energy lies symmetrically between the population of conduction electrons and the population of holes and thus is at the center of the gap. There need not be an available state at the location of the Fermi energy.)
Pure silicon at room temperature has an electron number density in the conduction band of about and an equal density of holes in the valence band. Suppose that one of every silicon atoms is replaced by a phosphorus atom. (a) Which type will the doped semiconductor be, nor p? (b) What charge carrier number density will the phosphorus add? (c) What is the ratio of the charge carrier number density (electrons in the conduction band and holes in the valence band) in the doped silicon to that in pure silicon?
In Eq. 41-6 let, . (a) At what temperature does the result of using this equation differ by 1% from the result of using the classical Boltzmann equation (which is Eq. 41-1 with two changes in notation)? (b) At what temperature do the results from these two equations differ by 10%?
In a silicon lattice, where should you look if you want to find (a) a conduction electron, (b) a valence electron, and (c) an electron associated with the 2psubshell of the isolated silicon atom?
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