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91Ó°ÊÓ

In Eq. 41-6 let, E-EF=∆E=1.00eV. (a) At what temperature does the result of using this equation differ by 1% from the result of using the classical Boltzmann equation P(E)=e-∆E/kT(which is Eq. 41-1 with two changes in notation)? (b) At what temperature do the results from these two equations differ by 10%?

Short Answer

Expert verified
  1. The temperature at which the result of the given equation differs 1% by from the result is 2520 K .
  2. The temperature at which the results from these two equations differ by 10% is 5.28×103K.

Step by step solution

01

The given data

The given equation, E-EF=∆E=1.00eV

02

Occupancy Probability

The probability that an electron will occupy a certain level, according to Fermi-Dirac statistics and Boltzmann's statistics, is known as occupancy probability. Fo the Fermi level the occupancy probability is 0.5.

The occupancy probability due to Fermi-Dirac statistics,

PFD=1e∆E/kT+1.......................(1)

The Boltzmann occupation probability,

PB=e-∆E/kTwherek=1.38×10-23J/K...................................(2)

03

a) Calculation of the temperature of result differing by 1%

Let the fractional difference between the probability differences be f.

Thus, using equations (1) and (2), the fractional difference can be given as follows:

f=PB-PFDPB=1/e∆E/kT-1/e∆E/kT+1e∆E/kT=e∆E/kT+1-e∆E/kTe∆E/kT+1e∆E/kT.e∆E/kT=1e∆E/kT+1

The above equation can also be written as-

e∆E/kT=1f-1

For f = 0.01,

e∆E/kT=10.01-1=99

Taking logarithm on both sides

∆EkT=In99T=∆EkIn(99)T=1.0eV×1.6×10-19J/eV1.38×10-23J/K×4.6T=2520K

Hence, the value of the temperature is 2520 K.

04

b) Calculation of the temperature of result differing by 10%

If f = 0.1

Then, the temperature is given as-

T=∆EkIn(99)=1.00eV1.6×10-19J/eV1.38×10-23J/KIn9=5.28×103K

Hence, the value of the temperature is 5.28×103K.

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Most popular questions from this chapter

In a simplified model of an undoped semiconductor, the actual distribution of energy states may be replaced by one in which there are NVstates in the valence band, all having the same energyEV, andNCstates in the conduction band all these states having the same energyEc. The number of electrons in the conduction band equals the number of holes in the valence band.

  1. Show that this last condition implies that Ncexp(∆Ec/kT)+1=Nvexp(∆Ev/kT)+1in which∆Ec=∆Ec-∆EF and ∆Ev=-(∆Ev-∆EF).
  2. If the Fermi level is in the gap between the two bands and its distance from each band is large relative to kT then the exponentials dominate in the denominators. Under these conditions, show that EF=(Ec+Ev)2+kTIn(Nv+Nc)2and that ifNv≈Nc , the Fermi level for the undoped semiconductor is close to the gap’s center.

Use the result of Problem 23 to calculate the total translational kinetic energy of the conduction electrons in 1.00cm3 of copper at T = 0K.

For an ideal p-njunction rectifier with a sharp boundary between its two semiconducting sides, the current Iis related to the potential difference Vacross the rectifier by l=l0(eeV/kT-1), where l0, which depends on the materials but not on Ior V, is called the reverse saturation current.The potential difference Vis positive if the rectifier is forward-biased and negative if it is back-biased. (a) Verify that this expression predicts the behavior of a junction rectifier by graphing Iversus Vfrom to -12Vto+0.12V. Take T=300Kand l0=5.0nA. (b) For the same temperature, calculate the ratio of the current for a 0.50 V forward bias to the current for a 0.50 V back bias.

If the temperature of a piece of a metal is increased, does the probability of occupancy 0.1 eV above the Fermi level increase, decrease, or remain the same?

In the biased p-njunctions shown in Fig. 41-15, there is an electric field E→in each of the two depletion zones, associated with the potential difference that exists across that zone. (a) Is the electric field vector directed from left to right in the figure or from right to left? (b) Is the magnitude of the field greater for forward bias or for back bias?

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