/*! This file is auto-generated */ .wp-block-button__link{color:#fff;background-color:#32373c;border-radius:9999px;box-shadow:none;text-decoration:none;padding:calc(.667em + 2px) calc(1.333em + 2px);font-size:1.125em}.wp-block-file__button{background:#32373c;color:#fff;text-decoration:none} Q22P At what temperature do 1.30% of ... [FREE SOLUTION] | 91Ó°ÊÓ

91Ó°ÊÓ

At what temperature do 1.30% of the conduction electrons in lithium (a metal) have energies greater than the Fermi energy EF, which is 4.70 eV? (See Problem 21)

Short Answer

Expert verified

The temperature at which 1.30% of the conduction electrons in lithium have energies greater than the Fermi energy is 472.5 K .

Step by step solution

01

The given data

a) The fraction of conduction electrons having energies greater than the Fermi energy, frac=0.013

b) Fermi energy of lithium, EF=4.70 eV

02

Understanding the concept of fraction of conduction electrons

The electrons that have jumped to the conduction band from the valence band and are now free to move within the walls of the substance are known as conduction electrons.

Formula:

The fraction of electrons with energies greater than the Fermi energy is

frac=3kT2EF ……( i )

wherek=8.62×10-5 eV/K

03

Calculation of the temperature

Using the given data in equation (i), we get the temperature at which the 1.30% energy is greater than the Fermi energy can be calculated as follows:

T=2fracEF3k=20.0134.70eV8.62×10-5eV/K=472.5K

Hence, the value of the temperature is 472.5 K.

Unlock Step-by-Step Solutions & Ace Your Exams!

  • Full Textbook Solutions

    Get detailed explanations and key concepts

  • Unlimited Al creation

    Al flashcards, explanations, exams and more...

  • Ads-free access

    To over 500 millions flashcards

  • Money-back guarantee

    We refund you if you fail your exam.

Over 30 million students worldwide already upgrade their learning with 91Ó°ÊÓ!

One App. One Place for Learning.

All the tools & learning materials you need for study success - in one app.

Get started for free

Most popular questions from this chapter

A silicon-based MOSFET has a square gate 0.50μ³¾on edge. The insulating silicon oxide layer that separates the gate from the p-type substrate is 0.20μ³¾thick and has a dielectric constant of 4.5 . (a) What is the equivalent gate – substrate capacitance (treating the gate as one plate and the substrate as the other plate)? (b) Approximately how many elementary charges eappear in the gate when there is a gate – source potential difference of 1.0V ?

Verify the numerical factor 0.121 in Eq. 41-9.

Copper, a monovalent metal, has molar mass 63.54 g/mol and density 8.96g/cm3. What is the number density nof conduction electrons in copper?

The Fermi energy for copper is 7.00eV. For copper at 1000K, (a) find the energy of the energy level whose probability of being occupied by an electron is 0.900. For this energy, evaluate (b) the density of states N(E) and (c) the density of occupied states N0(E).

For an ideal p-njunction rectifier with a sharp boundary between its two semiconducting sides, the current Iis related to the potential difference Vacross the rectifier by l=l0(eeV/kT-1), where l0, which depends on the materials but not on Ior V, is called the reverse saturation current.The potential difference Vis positive if the rectifier is forward-biased and negative if it is back-biased. (a) Verify that this expression predicts the behavior of a junction rectifier by graphing Iversus Vfrom to -12Vto+0.12V. Take T=300Kand l0=5.0nA. (b) For the same temperature, calculate the ratio of the current for a 0.50 V forward bias to the current for a 0.50 V back bias.

See all solutions

Recommended explanations on Physics Textbooks

View all explanations

What do you think about this solution?

We value your feedback to improve our textbook solutions.

Study anywhere. Anytime. Across all devices.