A furnace for processing semiconductor materials is formed by a silicon
carbide chamber that is zone heated on the top section and cooled on the lower
section. With the elevator in the lowest position, a robot arm inserts the
silicon wafer on the mounting pins. In a production operation, the wafer is
rapidly moved toward the hot zone to achieve the temperature-time history
required for the process recipe. In this position the top and boltom surfaces
of the wafer exchange radiation with the hot and cool rones, respectively, of
the chamber. The zone temperatures are \(T_{\mathrm{a}}=1500 \mathrm{~K}\) and
\(T_{c}=\) \(330 \mathrm{~K}\), and the emissivity and thickness of the wafer are
\(e=0.65\) and \(d=0.78 \mathrm{~mm}\), respectively. With the ambient gas at
\(T_{w}=700 \mathrm{~K}\), convection coefficients at the upper and lower
surfaces of the wafer are 8 and \(4 \mathrm{~W} / \mathrm{m}^{2}-\mathrm{K}\).
respectively. The silicon wafer has a den. sity of \(2700 \mathrm{~kg} /
\mathrm{m}^{3}\) and a specific heat of \(875 \mathrm{~J} / \mathrm{kg} \cdot
\mathrm{K}\). (a) For an initial condition corresponding fo a wafer tempersture
of \(T_{w i}=300 \mathrm{~K}\) and the position of the wafer shawn
schematically. determine the corresponding time rate of change of the wafer
tempereture, \(\left(d T_{w} / d r\right)_{0}\).
(b) Determine the steady state temperature reached by the wafer if it remains
in this position. How significant is convection heat transfer for this
situation? Sketch how you would expect the wafer temperature to vary as a
function of vertical distance.