Chapter 20: Problem 97
At absolute zero, Si acts as: (A) Non-metal (B) Metal (C) Insulator (D) None of these
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Chapter 20: Problem 97
At absolute zero, Si acts as: (A) Non-metal (B) Metal (C) Insulator (D) None of these
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If the ratio of the concentration of electrons and that of holes in a semiconductor is \(\frac{7}{5}\) and the ratio of currents is \(\frac{7}{4}\), then what is the ratio of their drift velocities? (A) \(\frac{7}{4}\) (B) \(\frac{5}{8}\) (C) \(\frac{4}{5}\) (D) \(\frac{5}{4}\)
Then the value of \(\beta\) is (A) 100 (B) 50 (C) 200 (D) 150
The depletion layer in the \(P-N\) junction region is caused by (A) Drift of holes (B) Diffusion of charge carriers (C) Migration of impurity ions (D) Drift of electrons
A \(N P N\) transistor conducts when (A) Both collector and emitter are positive with respect to the base. (B) Collector is positive and emitter is negative with respect to the base. (C) Collector is positive and emitter is at same potential as the base. (D) Both collector and emitter are negative with respect to the base.
Carbon, silicon and germanium have four valence elements each. At room temperature which one of the following statement(s) is most appropriate? [2007] (A) The number of free electrons for conduction is significant in all the three (B) The number of free electrons for conduction is significant only in Si and Ge but small in \(C\) (C) The number of free conduction electrons is significant in \(C\) but small in Si and Ge (D) The number of free conduction electrons is negligibly small in all the three
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