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Chapter 20: Problem 41

A \(N P N\) transistor conducts when (A) Both collector and emitter are positive with respect to the base. (B) Collector is positive and emitter is negative with respect to the base. (C) Collector is positive and emitter is at same potential as the base. (D) Both collector and emitter are negative with respect to the base.

Short Answer

Expert verified
The correct option is (B) Collector is positive and emitter is negative with respect to the base.

Step by step solution

01

Understand the Polarity of NPN Transistor

In an NPN transistor, the P-type base is sandwiched between the N-type emitter and N-type collector. The N-type layers are heavily doped, whereas the P-type layer is lightly doped. Hence, the emitter-base junction is forward biased, and the collector-base junction is reverse biased. In order for the electrons to flow freely and easily across the junctions, the emitter must be more negative than the base, and the collector must be more positive than both the emitter and base. Hence, in an NPN transistor, current flows from the collector to the emitter.
02

Identify the Condition for Conduction in NPN Transistor

The condition for conduction in the NPN transistor can be identified as: the base-emitter junction should be forward biased and the collector-base junction should be reverse biased. This means the emitter should be Negative with respect to the base, and the collector should be Positive with respect to both the base and emitter.
03

Match the Condition to the Given Options

By matching this condition to the given options, it is found that the option that most closely fits is: (B) Collector is positive and emitter is negative with respect to the base.

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Most popular questions from this chapter

In order to forward bias a \(P-N\) junction, the negative terminal of battery is connected to (A) \(P\)-side (B) Either \(P\)-side or \(N\)-side (C) \(N\)-side (D) None of these

Carbon, silicon and germanium have four valence elements each. At room temperature which one of the following statement(s) is most appropriate? [2007] (A) The number of free electrons for conduction is significant in all the three (B) The number of free electrons for conduction is significant only in Si and Ge but small in \(C\) (C) The number of free conduction electrons is significant in \(C\) but small in Si and Ge (D) The number of free conduction electrons is negligibly small in all the three

A diode having potential difference \(0.5 \mathrm{~V}\) across its junction which does not depend on current, is connected in series with resistance of \(20 \Omega\) across source. If \(0.1\) A passes through resistance then what is the voltage of the source (A) \(1.5 \mathrm{~V}\) (B) \(2.0 \mathrm{~V}\) (C) \(2.5 \mathrm{~V}\) (D) \(5 \mathrm{~V}\)

If no external voltage is applied across \(P-N\) junction, there would be (A) No electric field across the junction. (B) An electric field pointing from \(N\)-type to \(P\)-type side across the junction. (C) An electric field pointing from \(P\)-type to \(N\)-type side across the junction. (D) A temporary electric field during formation of \(P-N\) junction that would subsequently disappear.

Zener breakdown in a semi-conductor diode occurs when (A) Forward current exceeds certain value (B) Reverse bias exceeds certain value (C) Forward bias exceeds certain value (D) Potential barrier is reduced to zero
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