Chapter 20: Problem 46
Least doped region in a transistor (A) Either emitter or collector (B) Base (C) Emitter (D) Collector
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Chapter 20: Problem 46
Least doped region in a transistor (A) Either emitter or collector (B) Base (C) Emitter (D) Collector
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For a transistor amplifier in common emitter configuration for load impedance of \(1 k \Omega\left(h_{f e}=50\right)\) and ( \(\left.h_{\text {oe }}=25 \mu \mathrm{A} / \mathrm{V}\right)\), the current gain is [2004] (A) \(-5.2\) (B) \(-15.7\) (C) \(-24.8\) (D) \(-48.78\)
When \(p-n\) junction diode is forward biased, then [2004] (A) the depletion region is reduced and barrier height is increased. (B) the depletion region is widened and barrier height is reduced. (C) both the depletion region and barrier height are reduced. (D) both the depletion region and barrier height are increased.
On increasing the reverse bias to a large value in a \(P-N\) junction diode, current (A) Increases slowly (B) Remains fixed (C) Suddenly increases (D) Decreases slowly
The manifestation of band structure in solids is due to \([2004]\) (A) Heisenberg's uncertainty principle. (B) Pauli's exclusion principle. (C) Bohr's correspondence principle. (D) Boltzmann's law.
When the \(P\) end of \(P-N\) junction is connected to the negative terminal of the battery and the \(N\) end to the positive terminal of the battery, then the \(P-N\) junction behaves like (A) A conductor (B) An insulator (C) A super-conductor (D) A semi-conductor
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