Chapter 20: Problem 3
On increasing the reverse bias to a large value in a \(P-N\) junction diode, current (A) Increases slowly (B) Remains fixed (C) Suddenly increases (D) Decreases slowly
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Chapter 20: Problem 3
On increasing the reverse bias to a large value in a \(P-N\) junction diode, current (A) Increases slowly (B) Remains fixed (C) Suddenly increases (D) Decreases slowly
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In a common emitter transistor, the current gain is 80 . What is the change in collector current, when the change in base current is \(250 \mu \mathrm{A} ?\) (A) \(80 \times 250 \mu \mathrm{A}\) (B) \((250-80) \mu \mathrm{A}\) (C) \((250+80) \mu \mathrm{A}\) (D) \(250 / 80 \mu \mathrm{A}\)
In an \(N P N\) transistor the collector current is \(24 \mathrm{~mA}\). If \(80 \%\) of electrons reach collector its base current in \(\mathrm{mA}\) is (A) 36 (B) 26 (C) 16 (D) 6
Consider the following statements \(A\) and \(B\) and identify the correct choice of the given answers \(A\) : The width of the depletion layer in a \(P-N\) junction diode increases in forwards bias \(B\) : In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap (A) \(A\) is true and \(B\) is false (B) Both \(A\) and \(B\) is false (C) \(A\) is false and \(B\) is true (D) Both \(A\) and \(B\) is true
In a common-base mode of transistor, the collector current is \(5.488 \mathrm{~mA}\) for an emitter current of \(5.60 \mathrm{~mA}\). The value of the base current amplification factor \((\beta)\) will be (A) 49 (B) 50 (C) 51 (D) 48
When the \(P\) end of \(P-N\) junction is connected to the negative terminal of the battery and the \(N\) end to the positive terminal of the battery, then the \(P-N\) junction behaves like (A) A conductor (B) An insulator (C) A super-conductor (D) A semi-conductor
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