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Chapter 20: Problem 36

When \(N P N\) transistor is used as an amplifier (A) electrons move from base to collector. (B) holes move from emitter to base. (C) electrons move from collector to base. (D) holes move from base to emitter.

Short Answer

Expert verified
The correct answer is (A) electrons move from base to collector. The reasoning is that in an NPN transistor used as an amplifier, the primary charge carriers are electrons which move from the emitter, to base, then to the collector. This represents an outward current from the base.

Step by step solution

01

Recall the function of an NPN transistor

NPN is a type of bipolar junction transistor (BJT) that consists of a layer of p-doped semiconductor (the 'base') between two n-doped layers (the 'collector' and the 'emitter'). When a positive voltage is applied to the base-emitter junction, the transistor is 'on' and current flows: electrons are repelled from the n-type emitter, drawn towards the positive charge at the p-type base, but they quickly pass through to the n-type collector. The base layer must be thin enough that the electrons don't recombine within it.
02

Compare the options with principle of an NPN transistor

Given the function of an NPN transistor, we can now consider our options: (A) electrons move from base to collector correctly describes the electron flow we've established, whereas (C) electrons moving from collector to base is contrary to this. The other options -(B) holes move from emitter to base and (D) holes move from base to emitter- involve hole flow, not electron flow. Therefore, these two options do not explain the operating structure.

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Most popular questions from this chapter

A transistor is used in common-emitter mode as an amplifier. Then (A) the base-collector junction is forward biased (B) the base emitter junction is reversed biased (C) the input signal is connected in series with the voltage applied to the base-emitter junction (D) the input signal is connected in series with the voltage applied to the base-collector junction.

In a common emitter transistor, the current gain is 80 . What is the change in collector current, when the change in base current is \(250 \mu \mathrm{A} ?\) (A) \(80 \times 250 \mu \mathrm{A}\) (B) \((250-80) \mu \mathrm{A}\) (C) \((250+80) \mu \mathrm{A}\) (D) \(250 / 80 \mu \mathrm{A}\)

In NPN transistor the collector current is \(10 \mathrm{~mA}\). If \(90 \%\) of electrons emitted reach the collector, then (A) emitter current will be \(9 \mathrm{~mA}\). (B) emitter current will be \(11.1 \mathrm{~mA}\). (C) base current will be \(0.1 \mathrm{~mA}\). (D) base current will be \(0.01 \mathrm{~mA}\).

The reason of current flow in \(P-N\) junction in forward bias is (A) Drifting of charge carriers (B) Minority charge carriers (C) Diffusion of charge carriers (D) All of these

When \(n-p-n\) transistor is used as an amplifier (A) electrons move from base to collector. (B) holes move from collector to base. (C) electrons move from collector to base. (D) holes move from base to emitter.
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