Chapter 20: Problem 15
Avalanche breakdown is due to (A) Collision of minority charge carrier (B) Increase in depletion layer thickness (C) Decrease in depletion layer thickness (D) None of these
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Chapter 20: Problem 15
Avalanche breakdown is due to (A) Collision of minority charge carrier (B) Increase in depletion layer thickness (C) Decrease in depletion layer thickness (D) None of these
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On increasing the reverse bias to a large value in a \(P-N\) junction diode, current (A) Increases slowly (B) Remains fixed (C) Suddenly increases (D) Decreases slowly
Which of the following statements is not true? (A) The resistance of intrinsic semiconductors decrease with increase of temperature (B) Doping pure Si with trivalent impurities give \(P\)-type semiconductors (C) The majority carriers in \(N\)-type semiconductors are holes (D) A \(P-N\) junction can act as a semiconductor diode
When the \(P\) end of \(P-N\) junction is connected to the negative terminal of the battery and the \(N\) end to the positive terminal of the battery, then the \(P-N\) junction behaves like (A) A conductor (B) An insulator (C) A super-conductor (D) A semi-conductor
A diode having potential difference \(0.5 \mathrm{~V}\) across its junction which does not depend on current, is connected in series with resistance of \(20 \Omega\) across source. If \(0.1\) A passes through resistance then what is the voltage of the source (A) \(1.5 \mathrm{~V}\) (B) \(2.0 \mathrm{~V}\) (C) \(2.5 \mathrm{~V}\) (D) \(5 \mathrm{~V}\)
If \(\alpha\) and \(\beta\) are the current gain in the \(C B\) and \(C E\) configurations respectively of the transistor circuit, then \(\frac{\beta-\alpha}{\alpha \beta}\) is equal to (A) 1 (B) 2 (C) 3 (D) Zero
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