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Pure germanium has a band gap of 0.67 ev. The Fermienergy is in the middle of the gap. (a) For temperatures of 250 \(\mathrm{K}\) ,\(300 \mathrm{K},\) and 350 \(\mathrm{K}\) , calculate the probability \(f(E)\) that a state at the bottom of the conduction band is occupied. (b) For each temperature in part (a), calculate the probability that a state at the top of the valence band is empty.

Short Answer

Expert verified
At 250 K: 0.031; at 300 K: 0.017; at 350 K: 0.009.

Step by step solution

01

Understanding Fermi-Dirac Distribution

To solve the problem, we need to use the Fermi-Dirac distribution function, given by \( f(E) = \frac{1}{e^{(E - E_F)/(kT)} + 1} \). Here, \( E \) is the energy of the electron, \( E_F \) is the Fermi energy, \( k \) is the Boltzmann constant \( (8.617 \times 10^{-5} \text{ eV/K}) \), and \( T \) is the temperature in Kelvin.
02

Determine Fermi Energy

For intrinsic semiconductors like germanium, the Fermi energy \( E_F \) is located in the middle of the band gap. Therefore, for germanium with a band gap of 0.67 eV, \( E_F = 0.67/2 = 0.335 \) eV.
03

Calculate Occupancy Probability at Conduction Band

The probability that a state at the bottom of the conduction band, \( E_C = E_F + 0.335 \text{ eV} \), is occupied at temperature \( T \) is given by \( f(E_C) = \frac{1}{e^{0.335/(kT)} + 1} \). Substitute \( k \) and \( T = 250, 300, 350 \text{ K} \) to compute probabilities.
04

Compute for 250 K

At \( T = 250 \text{ K} \), compute \( f(E_C) = \frac{1}{e^{0.335/(8.617 \times 10^{-5} \times 250)} + 1} \approx 0.031 \).
05

Compute for 300 K

At \( T = 300 \text{ K} \), compute \( f(E_C) = \frac{1}{e^{0.335/(8.617 \times 10^{-5} \times 300)} + 1} \approx 0.017 \).
06

Compute for 350 K

At \( T = 350 \text{ K} \), compute \( f(E_C) = \frac{1}{e^{0.335/(8.617 \times 10^{-5} \times 350)} + 1} \approx 0.009 \).
07

Calculate Empty Probability at Valence Band

The probability that a state at the top of the valence band, \( E_V = E_F - 0.335 \text{ eV} \), is empty is \( 1 - f(E_V) \). Using \( f(E_V) = \frac{1}{e^{-0.335/(kT)} + 1} \), compute for each temperature.
08

Compute for 250 K (Valence)

Using the symmetry of the Fermi function, \( 1 - f(E_V) = f(E_C) \). Thus, at \( T = 250 \text{ K} \), the probability is also \( 1 - f \approx 0.031 \).
09

Compute for 300 K (Valence)

At \( T = 300 \text{ K} \), the probability is \( 1 - f \approx 0.017 \).
10

Compute for 350 K (Valence)

At \( T = 350 \text{ K} \), the probability is \( 1 - f \approx 0.009 \).

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Key Concepts

These are the key concepts you need to understand to accurately answer the question.

Semiconductors
Semiconductors are materials with electrical properties that stand between conductors and insulators. Unlike conductors, semiconductors have a significant energy band gap between the valence band (where electrons are normally present) and the conduction band (where electrons move freely). This unique property allows them to conduct electricity under certain conditions, such as the presence of added impurities (doping) or increased temperatures. In semiconductors, the ability of electrons to jump from the valence band to the conduction band enables the flow of current. This makes them essential in electronic devices, where they can act as either insulators or conductors depending on the conditions. Semiconductors like silicon and germanium are integral to the creation of computer chips, solar cells, and other technologies that require precise control over electrical characteristics.
Band Gap
The band gap is a crucial concept in understanding semiconductor behavior. It refers to the energy difference between the top of the valence band and the bottom of the conduction band. Electrons need to gain energy equal to or greater than the band gap to transition from a bound state in the valence band to a free state in the conduction band. Materials with a small band gap can conduct electricity more easily than those with a larger band gap.
  • Conductors: negligible or zero band gap
  • Semiconductors: moderate band gap (e.g., Germanium has a 0.67 eV band gap)
  • Insulators: large band gap, making electron transition difficult
The size of the band gap influences how a semiconductor reacts to temperature and light, which is why it's vital for designing electronic components.
Fermi Energy
Fermi energy is a concept used to describe the energy level at which the probability of finding an electron is 50% at absolute zero temperature. In semiconductors, especially intrinsic ones like pure germanium or silicon, the Fermi energy is positioned approximately in the middle of the band gap. This central position of the Fermi energy indicates that at this energy level, electrons are equally likely to be found in the conduction or valence bands when external influences like temperature are absent. Using Fermi energy, we can utilize the Fermi-Dirac distribution to predict how the probability of electron occupancy changes with temperature, an essential factor in semiconductor physics.
Intrinsic Semiconductors
Intrinsic semiconductors are pure forms of semiconductor materials without any significant impurities. In such semiconductors, the number of electrons in the conduction band equals the number of holes in the valence band, maintaining electrical neutrality. Intrinsic semiconductors are affected primarily by temperature. As temperature rises, more electrons gain the energy needed to cross the band gap, increasing electrical conductivity. For germanium, with a relatively small band gap, thermal energy at room temperature or even lower can promote electron transition. While intrinsic semiconductors offer a basis for understanding semiconductor properties, in practice, extrinsic semiconductors (those with added impurities) are more widely used, as doping enhances conductivity or control over electrical characteristics, necessary for practical electronic applications like transistors and diodes.

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Most popular questions from this chapter

A hypothetical \(\mathrm{NH}\) molecule makes a rotational-level transition from \(l=3\) to \(I=1\) and gives off a photon of wavelength 1.780 \(\mathrm{nm}\) in doing so. What is the separation between the two atoms in this molecule if we model them as point masses? The mass of hydrogen is \(1.67 \times 10^{-27} \mathrm{kg},\) and the mass of nitrogen is \(2.33 \times 10^{-26} \mathrm{kg} .\)

When an OH molecule undergoes a transition from the \(n=0\) to the \(n=1\) vibrational level, its internal vibrational energy increases by 0.463 eV. Calculate the frequency of vibration and the force constant for the interatomic force. (The mass of an oxygen atom is \(2.66 \times 10^{-26} \mathrm{kg},\) and the mass of a hydrogen atom is \(1.67 \times 10^{-27} \mathrm{kg} .\) )

A hypothetical diatomic molecule of oxygen (mass =\( 2.656 \times 10^{-26} \mathrm{kg} ) \quad \text { and } \quad \text { hydrogen } \quad\left(\text { mass }=1.67 \times 10^{-27} \mathrm{kg}\right)\) emits a photon of wavelength 2.39\(\mu \mathrm{m}\) when it makes a transition from one vibrational state to the next lower state. If we model this molecule as two point masses at opposite ends of a massless spring, (a) what is the force constant of this spring, and (b) how many vibrations per second is the molecule making?

(a) Suppose a piece of very pure germanium is to be used as a light detector by observing, through the absorption of photons, the increase in conductivity resulting from generation of electron-hole pairs. If each pair requires 0.67 \(\mathrm{eV}\) of energy, what is the maximum wavelength that can be detected? In what portion of the spectrum does it lie? (b) What are the answers to part (a) if the material is silicon, with an energy requirement of 1.14 eV per pair, corresponding to the gap between valence and conduction bands in that element?

The maximum wavelength of light that a certain silicon photocell can detect is 1.11\(\mu \mathrm{m}\) . (a) What is the energy gap (in electron volts) between the valence and conduction bands for this photocell? (b) Explain why pure silicon is opaque.

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