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Calculate the fraction of lattice sites that are Schottky defects for cesium chloride at its melt- ing temperature (645C). Assume an energy for defect formation of 1.86 eV.

Short Answer

Expert verified
Answer: The fraction of lattice sites with Schottky defects in cesium chloride at its melting temperature (645掳C) is approximately 0.095 or 9.5%.

Step by step solution

01

Convert the given temperature in Celsius to Kelvin

To do calculations with temperature involving Boltzmann's statistics, we need to convert the given temperature from Celsius to Kelvin. To convert 645掳C to Kelvin, add 273.15: Temperature (T) = 645 + 273.15 K T = 918.15 K
02

Convert the energy for defect formation to Joules

We have the energy for defect formation given in eV, but in order to use it in Boltzmann's constant calculations, we need to convert it to Joules. To convert 1.86 eV to Joules, multiply it by the conversion factor (1.60218脳10^{-19} J/eV): Energy (E) = 1.86 eV 脳 1.60218脳10^{-19} J/eV E = 2.979脳10^{-19} J
03

Use Boltzmann's statistics to calculate the fraction of lattice sites with Schottky defects

According to Boltzmann's statistics, the fraction of lattice sites with Schottky defects (n) can be calculated using the following formula: n = exp(-E/(kT)) Where E is the energy for defect formation (in Joules), k is Boltzmann's constant (8.617脳10^{-5} eV/K or 1.38脳10^{-23} J/K), and T is the absolute temperature (in Kelvin). We can now plug in the known values (E 鈥 in Joules, k 鈥 in J/K and T 鈥 in K) into the formula: n = exp(-2.979脳10^{-19} J/(1.38脳10^{-23} J/K 脳 918.15 K)) Calculating the expression gives: n = exp(-2.979脳10^{-19} J/(1.266脳10^{-20} J)) n = exp(-2.356)
04

Calculate the numerical value for the fraction of lattice sites with Schottky defects

Now we can find the numerical value for n: n = exp(-2.356) n 鈮 0.095 Therefore, the fraction of lattice sites with Schottky defects in cesium chloride at its melting temperature (645掳C) is approximately 0.095 or 9.5%.

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Key Concepts

These are the key concepts you need to understand to accurately answer the question.

Lattice Sites
Lattice sites are the regular, repeating positions in a crystal lattice where atoms or ions are situated. These sites form the basic structure of the crystal and determine how it is organized in three-dimensional space. Lattice sites are crucial for understanding numerous properties of solid materials, including their ability to conduct heat and electricity.
In the context of Schottky defects, lattice sites refer to the positions within the crystal where an atom or ion is missing. This absence leads to the creation of paired vacancies鈥攐ne cation and one anion are both missing to preserve electrical neutrality.
  • Lattice sites are the organized positions within a crystal.
  • Schottky defects occur when pairs of electrons are missing from these positions.
Understanding lattice sites helps us appreciate how the absence of atoms in these regular positions affects the crystal's overall properties, such as density, conductivity, and even mechanical strength.
Boltzmann's Statistics
Boltzmann's statistics provide a way to predict the distribution of particles, like atoms or ions, over various energy states in thermal equilibrium. This principle is particularly powerful when dealing with thermally activated processes such as the formation of Schottky defects.
In simple terms, Boltzmann's statistics help us understand how likely particles are to occupy higher energy states when subjected to thermal energy. The formula involved here is given by \[ n = \exp\left(\frac{-E}{kT}\right) \]where:
  • \( n \) is the fraction of lattice sites with defects.
  • \( E \) is the energy required to create a defect.
  • \( k \) is Boltzmann's constant.
  • \( T \) is the temperature in Kelvin.
By applying this formula, we can predict the fraction of lattice sites expected to have Schottky defects, as shown in the exercise. The role of temperature is crucial because it influences the likelihood of defects occurring as it changes the energy landscape available to atoms and ions.
Defect Formation Energy
Defect formation energy is the energy required to create a defect, such as a Schottky defect, in a crystal lattice. It quantifies the stability and ease with which a defect can form within the lattice structure.
For crystals like cesium chloride, a specific amount of energy is necessary to remove a cation and an anion from adjacent lattice sites, leaving vacancies that constitute a Schottky defect. This energy is determined by both the types of ions involved and their interactions within the lattice structure.
A lower defect formation energy means that defects are more likely to form, as less energy is needed to remove atoms from their lattice sites. Conversely, a higher formation energy indicates more robust crystal stability and fewer defects.
  • Defect formation energy affects how readily defects appear in a crystal.
  • It is an essential factor in evaluating material properties like durability and conductivity.
In the given example, the defect formation energy of 1.86 eV is used to calculate the probability of defects forming in cesium chloride at the melting point. Understanding this concept helps in tailoring materials for specific applications, ensuring they exhibit the desired level of stability or flexibility.

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Most popular questions from this chapter

Show that the minimum cation-to-anion radius ratio for a coordination number of 6 is 0.414. (Hint: Use the NaCl crystal structure in Figure 12.2, and assume that anions and cations are just touching along cube edges and across face diagonals.)

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