Chapter 18: Problem 6
What is the distinction between electronic and ionic conduction?
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Chapter 18: Problem 6
What is the distinction between electronic and ionic conduction?
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(a) The room-temperature electrical conductivity of a silicon specimen is \(5.93 \times 10^{-3}\) \((\Omega \cdot \mathrm{m})^{-1} .\) The hole concentration is known to be \(7.0 \times 10^{17} \mathrm{~m}^{-3}\). Using the electron and hole mobilities for silicon in Table \(18.3\), compute the electron concentration. (b) On the basis of the result in part (a), is the specimen intrinsic, \(n\)-type extrinsic, or \(p\)-type extrinsic? Why?
At room temperature the electrical conductivity and the electron mobility for copper are \(6.0 \times 10^{7}(\Omega \cdot \mathrm{m})^{-1}\) and \(0.0030 \mathrm{~m}^{2} / \mathrm{V} \cdot \mathrm{s}\), respectively. (a) Compute the number of free electrons per cubic meter for copper at room temperature. (b) What is the number of free electrons per copper atom? Assume a density of \(8.9 \mathrm{~g} / \mathrm{cm}^{3}\)
Compare the temperature dependence of the conductivity for metals and intrinsic semiconductors. Briefly explain the difference in behavior.
(a) Using the data in Figure \(18.8\), determine the values of \(\rho_{0}\) and \(a\) from Equation \(18.10\) for pure copper. Take the temperature \(T\) to be in degrees Celsius. (b) Determine the value of \(A\) in Equation \(18.11\) for nickel as an impurity in copper, using the data in Figure \(18.8\). (c) Using the results of parts (a) and (b), estimate the electrical resistivity of copper containing \(1.75\) at \(\%\) Ni at \(100^{\circ} \mathrm{C}\).
For each of the following pairs of semiconductors, decide which will have the smaller band gap energy, \(E_{g}\), and then cite the reason for your choice. (a) \(\mathrm{ZnS}\) and \(\mathrm{CdSe}\), (b) \(\mathrm{Si}\) and \(\mathrm{C}\) (diamond), (c) \(\mathrm{Al}_{2} \mathrm{O}_{3}\) and \(\mathrm{ZnTe}\), (d) InSb and ZnSe, and (e) GaAs and AlP.
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