Chapter 41: Q24P (page 1273)
A certain material has a molar mass of 20.0g/mol , Fermi energy of 5.00 eV , and 2 valence electrons per atom. What is the density ?
Short Answer
The density of the material is .
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Chapter 41: Q24P (page 1273)
A certain material has a molar mass of 20.0g/mol , Fermi energy of 5.00 eV , and 2 valence electrons per atom. What is the density ?
The density of the material is .
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At T = 300K, how far above the Fermi energy is a state for which the probability of occupation by a conduction electron is 0.10?
A silicon-based MOSFET has a square gate on edge. The insulating silicon oxide layer that separates the gate from the p-type substrate is thick and has a dielectric constant of 4.5 . (a) What is the equivalent gate – substrate capacitance (treating the gate as one plate and the substrate as the other plate)? (b) Approximately how many elementary charges eappear in the gate when there is a gate – source potential difference of 1.0V ?
(a) Show that the density of states at the Fermi energy is given by
in which nis the number density of conduction electrons.
(b) Calculate for copper, which is a monovalent metal with molar mass 63.54g/mol and density .
Verify your calculation with the curve of Fig. 41-6, recalling that =for copper.

Doping changes the Fermi energy of a semiconductor. Consider silicon, with a gap of 1.11eV between the top of the valence band and the bottom of the conduction band. At 300K the Fermi level of the pure material is nearly at the mid-point of the gap. Suppose that silicon is doped with donor atoms, each of which has a state 0.15eV below the bottom of the silicon conduction band, and suppose further that doping raises the Fermi level to 0.11eV below the bottom of that band (Fig. 41-22). For (a) pure and (b) doped silicon, calculate the probability that a state at the bottom of the silicon conduction band is occupied. (c) Calculate the probability that a state in the doped material (at the donor level) is occupied.

Use Eq. 41-9 to verify 7.0eV as copper’s Fermi energy.
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