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A certain material has a molar mass of 20.0g/mol , Fermi energy of 5.00 eV , and 2 valence electrons per atom. What is the density (g/cm3)?

Short Answer

Expert verified

The density of the material is0.84g/cm3 .

Step by step solution

01

The given data

  1. Molar mass of the material,A = 20 g/mol .
  2. Fermi energy of the material,EF=5eV.
  3. Each atom has 2 valence electrons.
02

Understanding the concept of density

The number of conduction electrons per unit volume per unit energy range, at a particular energy is given as number density of these conduction electrons.

The equation of Fermi energy is

EF=[3162ττ]2/3h2mn2/3 (i)

where, n is the number of conduction electrons per unit volume, m is the mass of an electron and h is the Planck’s constant.

The density of a material according to the number of atoms per unit volume and molar mass of a material,

Pmaterial=natomsA (ii)

03

Calculation of the density of the material

At first using equation (i) and the given value of Fermi energy, we calculate the number of conduction electrons per unit volume as follows:

n=162π3meEFh23/2=162π3mec2EFhc23/2=162π30.511×106eV5eV1240eV.nm23/2∵mec2=0.511×106eV,hc=1240eV.nm=50.9/nm3

The number of moles per unit volume is given as-

n=5.09×1028/m36.022×1023/molAvogadro'snumber=6.022×1023/mol=8.4×104mol/m3

Now, we are given the atoms are bivalent,

natom=n/2=8.4×104mol/m3/2=4.2×104mol/m3

Thus, using this value in equation (ii), we can get the density of the material as follows:

Pmaterial=4.2×104mol/m320g/mol=8.4×105g/m3=0.84g/cm3

Hence, the value of the density is 0.84 g/cm3.

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Most popular questions from this chapter

At T = 300K, how far above the Fermi energy is a state for which the probability of occupation by a conduction electron is 0.10?

A silicon-based MOSFET has a square gate 0.50μ³¾on edge. The insulating silicon oxide layer that separates the gate from the p-type substrate is 0.20μ³¾thick and has a dielectric constant of 4.5 . (a) What is the equivalent gate – substrate capacitance (treating the gate as one plate and the substrate as the other plate)? (b) Approximately how many elementary charges eappear in the gate when there is a gate – source potential difference of 1.0V ?

(a) Show that the density of states at the Fermi energy is given by

N(EF)=4(31/3)(π2/3)(mn1/3)h2=(4.11×1018m-2eV-1)n1/3

in which nis the number density of conduction electrons.

(b) Calculate N(EF)for copper, which is a monovalent metal with molar mass 63.54g/mol and density 8.96g/cm3.

Verify your calculation with the curve of Fig. 41-6, recalling that EF=7.0eV=for copper.

Doping changes the Fermi energy of a semiconductor. Consider silicon, with a gap of 1.11eV between the top of the valence band and the bottom of the conduction band. At 300K the Fermi level of the pure material is nearly at the mid-point of the gap. Suppose that silicon is doped with donor atoms, each of which has a state 0.15eV below the bottom of the silicon conduction band, and suppose further that doping raises the Fermi level to 0.11eV below the bottom of that band (Fig. 41-22). For (a) pure and (b) doped silicon, calculate the probability that a state at the bottom of the silicon conduction band is occupied. (c) Calculate the probability that a state in the doped material (at the donor level) is occupied.

Use Eq. 41-9 to verify 7.0eV as copper’s Fermi energy.

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