Chapter 41: Q10P (page 1273)
Show that the probability P(E) that an energy level having energy Eis not occupied iswhere .
Short Answer
The probability P(E) that an energy level having energy E is not occupied is.
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Chapter 41: Q10P (page 1273)
Show that the probability P(E) that an energy level having energy Eis not occupied iswhere .
The probability P(E) that an energy level having energy E is not occupied is.
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Pure silicon at room temperature has an electron number density in the conduction band of about and an equal density of holes in the valence band. Suppose that one of every silicon atoms is replaced by a phosphorus atom. (a) Which type will the doped semiconductor be, nor p? (b) What charge carrier number density will the phosphorus add? (c) What is the ratio of the charge carrier number density (electrons in the conduction band and holes in the valence band) in the doped silicon to that in pure silicon?
When a photon enters the depletion zone of a p-njunction, the photon can scatter from the valence electrons there, transferring part of its energy to each electron, which then jumps to the conduction band. Thus, the photon creates electron–hole pairs. For this reason, the junctions are often used as light detectors, especially in the x-ray and gamma-ray regions of the electromagnetic spectrum. Suppose a single 662keV gamma-ray photon transfers its energy to electrons in multiple scattering events inside a semiconductor with an energy gap of 1.1eV, until all the energy is transferred. Assuming that each electron jumps the gap from the top of the valence band to the bottom of the conduction band, find the number of electron – hole pairs created by the process.
A certain metal has conduction electrons per cubic meter. A sample of that metal has a volume of and a temperature of 200K. How many occupied states are in the energy range of that is centered on the energy? (Caution:Avoid round-off in the exponential.)
Verify the numerical factor 0.121 in Eq. 41-9.
The energy gaps for the semiconductors silicon and germanium are, respectively, 1.12 and 0.67eV . Which of the following statements, if any, are true? (a) Both substances have the same number density of charge carriers at room temperature. (b) At room temperature, germanium has a greater number density of charge carriers than silicon. (c) Both substances have a greater number density of conduction electrons than holes. (d) For each substance, the number density of electrons equals that of holes.
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