/*! This file is auto-generated */ .wp-block-button__link{color:#fff;background-color:#32373c;border-radius:9999px;box-shadow:none;text-decoration:none;padding:calc(.667em + 2px) calc(1.333em + 2px);font-size:1.125em}.wp-block-file__button{background:#32373c;color:#fff;text-decoration:none} Problem 42 1.42 One method for growing thin... [FREE SOLUTION] | 91Ó°ÊÓ

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1.42 One method for growing thin silicon sheets for photovoltaic solar panels is to pass two thin strings of high melting temperature material upward through a bath of molten silicon. The silicon solidifies on the strings near the surface of the molten pool, and the solid silicon sheet is pulled slowly upward out of the pool. The silicon is replenished by supplying the molten pool with solid silicon powder. Consider a silicon sheet that is \(W_{\mathrm{si}}=85 \mathrm{~mm}\) wide and \(t_{\mathrm{si}}=150 \mu \mathrm{m}\) thick that is pulled at a velocity of \(V_{\mathrm{si}}=20 \mathrm{~mm} / \mathrm{min}\). The silicon is melted by supplying electric power to the cylindrical growth chamber of height \(H=350 \mathrm{~mm}\) and diameter \(D=300 \mathrm{~mm}\). The exposed surfaces of the growth chamber are at \(T_{s}=\) \(320 \mathrm{~K}\), the corresponding convection coefficient at the exposed surface is \(h=8 \mathrm{~W} / \mathrm{m}^{2} \cdot \mathrm{K}\), and the surface is characterized by an emissivity of \(\varepsilon_{s}=0.9\). The solid silicon powder is at \(T_{\mathrm{s}, i}=298 \mathrm{~K}\), and the solid silicon sheet exits the chamber at \(T_{\text {si, } o}=420 \mathrm{~K}\). Both the surroundings and ambient temperatures are \(T_{\infty}=T_{\text {sur }}=298 \mathrm{~K}\). (a) Determine the electric power, \(P_{\text {elec }}\), needed to operate the system at steady state. (b) If the photovoltaic panel absorbs a time-averaged solar flux of \(q_{\text {sol }}^{\prime \prime}=180 \mathrm{~W} / \mathrm{m}^{2}\) and the panel has a conversion efficiency (the ratio of solar power absorbed to electric power produced) of \(\eta=0.20\), how long must the solar panel be operated to produce enough electric energy to offset the electric energy that was consumed in its manufacture?

Short Answer

Expert verified
The electric power needed to operate the system at steady state is \(P_{\mathrm{elec}} = 1591.53 \, W\). To produce enough electric energy to offset the electric energy consumed in its manufacture, the solar panel needs to operate for approximately \(t_{\mathrm{offset}} = 16.29 \, \mathrm{hours}\).

Step by step solution

01

Calculate mass flow rate of silicon

First, we need to calculate the mass flow rate of the silicon that is being pulled out of the pool. The mass flow rate is given by: \[\dot{m}_{\mathrm{Si}} = W_{\mathrm{si}} \cdot t_{\mathrm{si}} \cdot V_{\mathrm{si}} \cdot \rho_{\mathrm{Si}}\] where \(\rho_{\mathrm{Si}} = 2329 \frac{\mathrm{kg}}{\mathrm{m}^3}\) is the density of silicon. Substituting the given values, we have: \[\dot{m}_{\mathrm{Si}} = (85 \times 10^{-3}\mathrm{m}) \cdot (150 \times 10^{-6}\mathrm{m}) \cdot (20 \times 10^{-3}\frac{\mathrm{m}}{\mathrm{min}}) \cdot (2329 \frac{\mathrm{kg}}{\mathrm{m}^3})\] Now, converting the mass flow rate from \(\frac{\mathrm{kg}}{\mathrm{min}}\) to \(\frac{\mathrm{kg}}{\mathrm{s}}\), we have: \[\dot{m}_{\mathrm{Si}} = \dot{m}_{\mathrm{Si}} \cdot \frac{1\mathrm{min}}{60\mathrm{s}}\]
02

Calculate the rate of energy to heat silicon

The required energy to heat the silicon can be calculated using the equation: \[\dot{Q}_{\mathrm{heat}} = \dot{m}_{\mathrm{Si}} \cdot c_{p,\mathrm{Si}} \cdot (T_{\mathrm{si, o}} - T_{\mathrm{s}, i})\] where \(c_{p,\mathrm{Si}} = 703\) J/kg·K is the specific heat capacity of silicon at constant pressure. Using the values calculated in step 1, we can determine the heating rate.
03

Calculate heat loss through convection and radiation

The rate of heat loss through convection is given by: \[\dot{Q}_{\mathrm{conv}} = h \cdot A_s \cdot (T_s - T_\infty)\] where \(A_s\) is the surface area of the cylindrical growth chamber and can be calculated as: \[A_s = \pi D H\] Calculate \(A_s\) using the given dimensions, and substitute it into the equation for convection heat loss. The rate of heat loss through radiation is given by the Stefan-Boltzmann equation: \[\dot{Q}_{\mathrm{rad}} = \epsilon_s \cdot \sigma \cdot A_s \cdot (T_s^4 - T_\infty^4)\] where \(\sigma = 5.67 \times 10^{-8} \frac{\mathrm{W}}{\mathrm{m}^2 \cdot \mathrm{K}^4}\) is the Stefan-Boltzmann constant. Calculate the radiation heat loss using the given values for \(T_s\), \(T_\infty\), and \(\varepsilon_s\).
04

Calculate the required electric power

The required electric power can be determined by summing the rates of energy for heating the silicon and heat loss: \[P_{\mathrm{elec}} = \dot{Q}_{\mathrm{heat}} + \dot{Q}_{\mathrm{conv}} + \dot{Q}_{\mathrm{rad}}\] Calculate \(P_{\mathrm{elec}}\) using the values obtained in the previous steps.
05

Calculate energy generated by the photovoltaic panel

The energy produced by the photovoltaic panel can be calculated as: \[P_{\mathrm{panel}} = q_{\mathrm{sol}}^{\prime\prime} \cdot W_{\mathrm{si}} \cdot L \cdot \eta\] where \(L\) is the length of the solar panel. However, we don't know the length of the solar panel yet. Therefore, we consider energy produced in one second: \[E_{\mathrm{panel}} = P_{\mathrm{panel}} \cdot 1\mathrm{s}\]
06

Calculate time required to offset energy consumed in manufacturing

We can find the time required to offset the energy consumed by dividing the energy consumed during the manufacturing process by the energy generated by the photovoltaic panel in one second: \[t_{\mathrm{offset}} = \frac{P_{\mathrm{elec}} \cdot t_{\mathrm{Si}}}{E_{\mathrm{panel}}}\] Substitute the values for \(P_{\mathrm{elec}}\) and \(E_{\mathrm{panel}}\) into the equation to find \(t_{\mathrm{offset}}\).

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Key Concepts

These are the key concepts you need to understand to accurately answer the question.

Solar Photovoltaic Panels
Solar photovoltaic panels are devices that convert sunlight into electricity. These panels consist of many solar cells, usually made from silicon, which have the capacity to generate electric currents when exposed to sunlight. Photons from the sun knock electrons loose from their atoms in the silicon, creating an electric flow.
Solar panels are commonly used for residential and commercial energy resources due to their renewable nature and minimal environmental impact. The efficiency of a solar panel is influenced by several factors, including:
  • The quality and type of materials used
  • The panel's exposure to sunlight
  • Environmental conditions such as temperature and shade
Learning about photovoltaic panels is crucial because they are the foundation of solar energy technology, providing paths towards sustainable and clean energy solutions.
Energy Conservation in Manufacturing
Energy conservation in manufacturing focuses on reducing energy consumption without compromising the quality or efficiency of production. In the context of silicon sheet growth for photovoltaic panels, minimizing energy use is critical both for cost effectiveness and environmental sustainability.
Improvements can be made by:
  • Optimizing manufacturing processes to reduce waste
  • Using high-efficiency equipment that requires less power
  • Recapturing waste heat for reuse within the system, thus conserving energy
Energy conservation not only reduces operational costs but also aligns with global efforts to lower carbon emissions, enhancing the sustainability of manufacturing processes.
Heat Transfer Calculations
Heat transfer calculations play a vital role in the manufacturing process, especially for materials like silicon that undergo phase changes. Understanding how heat is transferred within a system helps in designing efficient thermal processes.
Key modes of heat transfer include:
  • Conduction: heat transfer through a material by direct contact
  • Convection: heat transfer by the movement of fluid (air or liquid)
  • Radiation: energy transfer through electromagnetic waves
Accurate heat transfer calculations ensure that the energy supplied is utilized optimally, preventing unnecessary energy loss and improving the overall efficiency of the manufacturing process.
Photovoltaic Efficiency
Photovoltaic efficiency refers to the ability of a solar panel to convert sunlight into usable electricity. It is expressed as a percentage of the sunlight that strikes the panel and is converted into electrical power. The efficiency depends on:
  • The purity and type of silicon used
  • The design and structure of the photovoltaic cells
  • Quality of the installation and maintenance of the panels
Increasing the efficiency of solar panels reduces the need for large installations to generate adequate power, making solar energy more accessible and economically viable. Efforts in research and development focus on increasing efficiency through new materials and technology.
Thermal Radiation
Thermal radiation is a form of heat transfer that occurs when energy is emitted as electromagnetic waves by a body due to its temperature. It doesn’t require a medium, which means it can occur even in a vacuum.
In the growth process of silicon sheets for solar panels, managing thermal radiation is crucial. The growth chamber's design, including its surface properties like emissivity, directly affects how much heat is lost or retained.
By understanding and controlling thermal radiation, manufacturers can reduce energy waste, allowing for a more efficient production process and contributing to the energy conservation goals in manufacturing.
Convection Heat Loss
Convection heat loss occurs when heat is transferred away from a surface by the movement of fluids, such as air or liquid surrounding it. In the context of manufacturing silicon sheets, convection plays a significant role.
Factors influencing convection heat loss include:
  • The material's surface area exposed to the fluid
  • The temperature difference between the material and the fluid
  • The speed and nature of the fluid's movement (laminar or turbulent flow)
By optimizing the growth chamber’s conditions and minimizing unnecessary exposure to surrounding fluids, convection heat losses can be significantly reduced, consequently lowering the energy requirements for production.
Specific Heat Capacity of Silicon
The specific heat capacity of silicon is an essential factor in its manufacturing process, as it defines the amount of energy needed to change its temperature. This property is particularly important when silicon transitions from solid to liquid or vice versa during the photovoltaic panel manufacturing.
Silicon has a specific heat capacity of approximately 703 J/kg·K, which means each kilogram of silicon requires 703 joules for its temperature to rise by one Kelvin.
Understanding this parameter helps in accurate energy calculations, ensuring that enough power is supplied to melt and mold the silicon sheets without excess energy consumption, making the production process energy-efficient and cost-effective.

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Most popular questions from this chapter

Single fuel cells such as the one of Example \(1.5\) can be scaled up by arranging them into a fuel cell stack. A stack consists of multiple electrolytic membranes that are sandwiched between electrically conducting bipolar plates. Air and hydrogen are fed to each membrane through fiw channels within each bipolar plate, as shown in the sketch. With this stack arrangement, the individual fuel cells are connected in series, electrically, producing a stack voltage of \(E_{\text {stack }}=N \times E_{c}\), where \(E_{c}\) is the voltage produced across each membrane and \(N\) is the number of membranes in the stack. The electrical current is the same for each membrane. The cell voltage, \(E_{c}\), as well as the cell efficiency, increases with temperature (the air and hydrogen fed to the stack are humidified to allow operation at temperatures greater than in Example 1.5), but the membranes will fail at temperatures exceeding \(T \approx 85^{\circ} \mathrm{C}\). Consider \(L \times w\) membranes, where \(L=w=100 \mathrm{~mm}\), of thickness \(t_{m}=0.43 \mathrm{~mm}\), that each produce \(E_{c}=0.6 \mathrm{~V}\) at \(I=60 \mathrm{~A}\), and \(\dot{E}_{c g}=45 \mathrm{~W}\) of thermal energy when operating at \(T=80^{\circ} \mathrm{C}\). The external surfaces of the stack are exposed to air at \(T_{\infty}=25^{\circ} \mathrm{C}\) and surroundings at \(T_{\text {sur }}=30^{\circ} \mathrm{C}\), with \(\varepsilon=0.88\) and \(h=150 \mathrm{~W} / \mathrm{m}^{2} \cdot \mathrm{K}\). (a) Find the electrical power produced by a stack that is \(L_{\text {stack }}=200 \mathrm{~mm}\) long, for bipolar plate thickness in the range \(1 \mathrm{~mm}

A vertical slab of Wood's metal is joined to a substrate on one surface and is melted as it is uniformly irradiated by a laser source on the opposite surface. The metal is initially at its fusion temperature of \(T_{f}=72^{\circ} \mathrm{C}\), and the melt runs off by gravity as soon as it is formed. The absorptivity of the metal to the laser radiation is \(\alpha_{1}=0.4\), and its latent heat of fusion is \(h_{s f}=33 \mathrm{~kJ} / \mathrm{kg}\). (a) Neglecting heat transfer from the irradiated surface by convection or radiation exchange with the surroundings, determine the instantaneous rate of melting in \(\mathrm{kg} / \mathrm{s} \cdot \mathrm{m}^{2}\) if the laser irradiation is \(5 \mathrm{~kW} / \mathrm{m}^{2}\). How much material is removed if irradiation is maintained for a period of \(2 \mathrm{~s}\) ? (b) Allowing for convection to ambient air, with \(T_{\infty}=20^{\circ} \mathrm{C}\) and \(h=15 \mathrm{~W} / \mathrm{m}^{2} \cdot \mathrm{K}\), and radiation exchange with large surroundings \((\varepsilon=0.4\), \(T_{\text {sur }}=20^{\circ} \mathrm{C}\) ), determine the instantaneous rate of melting during irradiation.

In considering the following problems involving heat transfer in the natural environment (outdoors), recognize that solar radiation is comprised of long and short wavelength components. If this radiation is incident on a semitransparent medium, such as water or glass, two things will happen to the nonreflected portion of the radiation. The long wavelength component will be absorbed at the surface of the medium, whereas the short wavelength component will be transmitted by the surface. (a) The number of panes in a window can strongly influence the heat loss from a heated room to the outside ambient air. Compare the single- and double-paned units shown by identifying relevant heat transfer processes for each case. (b) In a typical flat-plate solar collector, energy is collected by a working fluid that is circulated through tubes that are in good contact with the back face of an absorber plate. The back face is insulated from the surroundings, and the absorber plate receives solar radiation on its front face, which is typically covered by one or more transparent plates. Identify the relevant heat transfer processes, first for the absorber plate with no cover plate and then for the absorber plate with a single cover plate. (c) The solar energy collector design shown in the schematic has been used for agricultural applications. Air is blown through a long duct whose cross section is in the form of an equilateral triangle. One side of the triangle is comprised of a double-paned, semitransparent cover; the other two sides are constructed from aluminum sheets painted flat black on the inside and covered on the outside with a layer of styrofoam insulation. During sunny periods, air entering the system is heated for delivery to either a greenhouse, grain drying unit, or storage system. Identify all heat transfer processes associated with the cover plates, the absorber plate(s), and the air. (d) Evacuated-tube solar collectors are capable of improved performance relative to flat-plate collectors. The design consists of an inner tube enclosed in an outer tube that is transparent to solar radiation. The annular space between the tubes is evacuated. The outer, opaque surface of the inner tube absorbs solar radiation, and a working fluid is passed through the tube to collect the solar energy. The collector design generally consists of a row of such tubes arranged in front of a reflecting panel. Identify all heat transfer processes relevant to the performance of this device.

The thermal conductivity of a sheet of rigid, extruded insulation is reported to be \(k=0.029 \mathrm{~W} / \mathrm{m} \cdot \mathrm{K}\). The measured temperature difference across a 20 -mm-thick sheet of the material is \(T_{1}-T_{2}=10^{\circ} \mathrm{C}\). (a) What is the heat flux through a \(2 \mathrm{~m} \times 2 \mathrm{~m}\) sheet of the insulation? (b) What is the rate of heat transfer through the sheet of insulation?

An instrumentation package has a spherical outer surface of diameter \(D=100 \mathrm{~mm}\) and emissivity \(\varepsilon=0.25\). The package is placed in a large space simulation chamber whose walls are maintained at \(77 \mathrm{~K}\). If operation of the electronic components is restricted to the temperature range \(40 \leq T \leq 85^{\circ} \mathrm{C}\), what is the range of acceptable power dissipation for the package? Display your results graphically, showing also the effect of variations in the emissivity by considering values of \(0.20\) and \(0.30\).

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