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Calculate \(g_{m 0}\) for a JFET having device parameters \(I_{D S S}=12 \mathrm{~mA}\) and \(V_{P}=-4 \mathrm{~V}\).

Determine the pinch-off voltage of a JFET with \(g_{m 0}=10 \mathrm{mS}\) and \(I_{D S S}=12 \mathrm{~mA}\).

For a JFET having device parameters \(g_{m 0}=5 \mathrm{mS}\) and \(V_{P}=-4 \mathrm{~V}\), what is the device current at \(V_{G S}=0 \mathrm{~V} ?\)

Calculate the value of \(g_{m}\) for a JFET \(\left(I_{D S S}=12 \mathrm{~mA}, V_{P}=-3 \mathrm{~V}\right)\) at a bias point of \(V_{G S}=\) \(-0.5 \mathrm{~V}\)

A JFET \(\left(I_{D S S}=10 \mathrm{~mA}, V_{P}=-5 \mathrm{~V}\right)\) is biased at \(I_{D}=I_{D S S} / 4\). What is the value of \(g_{m}\) at that bias point?

Determine the value of \(g_{m}\) for a JFET \(\left(I_{D S S}=8 \mathrm{~mA}, V_{P}=-5 \mathrm{~V}\right)\) when biased at \(V_{G S_{Q}}=V_{P} / 4\).

If a JFET having a specified value of \(r_{d}=100 \mathrm{k} \Omega\) has an ideal voltage gain of \(A_{v}(\mathrm{FET})=-200\), what is the value of \(g_{m}\) ?

a. Plot \(g_{m}\) versus \(V_{G S}\) for an \(n\) -channel JFET with \(I_{D S S}=12 \mathrm{~mA}\) and \(V_{P}=-6 \mathrm{~V}\). b. Plot \(g_{m}\) versus \(I_{D}\) for the same \(n\) -channel JFET as part (a).

Sketch the ac equivalent model for a JFET if \(g_{f s}=5.6 \mathrm{mS}\) and \(g_{a s}=15 \mu \mathrm{S}\).

Sketch the ac equivalent model for a JFET if \(I_{D S S}=10 \mathrm{~mA}, V_{P}=-4 \mathrm{~V}, V_{G S_{Q}}=-2 \mathrm{~V}\), and \(g_{o s}=25 \mu \mathrm{S} .\)