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Hall voltage \(* *\) A Hall probe for measuring magnetic fields is made from arsenic-doped silicon, which has \(2 \cdot 10^{21}\) conduction electrons per \(\mathrm{m}^{3}\) and a resistivity of \(0.016 \mathrm{ohm}-\mathrm{m}\). The Hall voltage is measured across a ribbon of this \(n\)-type silicon that is \(0.2 \mathrm{~cm}\) wide, \(0.005\) \(\mathrm{cm}\) thick, and \(0.5 \mathrm{~cm}\) long between thicker ends at which it is connected into a \(1 \mathrm{~V}\) battery circuit. What voltage will be measured across the \(0.2 \mathrm{~cm}\) dimension of the ribbon when the probe is inserted into a field of 1 kilogauss?

Short Answer

Expert verified
The voltage measured across the 0.2 cm dimension of the ribbon when the probe is inserted into a field of 1 kilogauss is approximately 4.9 µV.

Step by step solution

01

Identify Given Parameters

List the given parameters: \n1. Number of conduction electrons, \( n = 2 \cdot 10^{21} \) electrons per \( \mathrm{m}^{3} \) \n2. Ribbon width \( b = 0.2 \) cm \n3. Ribbon thickness \( d = 0.005 \) cm \n4. Applied magnetic field \( B = 1 \) kilogauss \n5. Applied voltage across the ribbon \( V = 1 \) V
02

Convert Units

To keep the units consistent, we need to convert \( b \), \( d \) and \( B \) to meters and Tesla respectively: \n1. Convert \( b \) to meters: \( b = 0.2 \) cm \( \times \) \( 10^{-2} \) \( = 0.002 \) m \n2. Convert \( d \) to meters: \( d = 0.005 \) cm \( \times \) \( 10^{-2} \) \( = 0.00005 \) m \n3. Convert \( B \) to Tesla: \( B = 1 \) kilogauss \( \times \) \( 10^{-4} \) \( = 0.1 \) T
03

Calculate the Hall Voltage

The Hall voltage \( V_H \) across the width of the ribbon can be calculated using the equation: \( V_H = \frac{I \times B \times d}{n \times e} \) where \( I \) is the current, \( B \) is the magnetic field strength, \( d \) is the thickness of the ribbon, \( n \) is the number of charge carriers, and \( e \) is the elementary charge. From Ohm's Law, we know \( I = \frac{V}{R} \), where \( R \) is the resistance. However, we don't have the values for \( I \) and \( R \). We do have the resistivity \( p = 0.016 \) Ohm-m, the applied voltage \( V = 1 \) V, and the dimensions of the ribbon. We can calculate \( R \) using the formula: \( R = p \times \frac{l}{A} \) where \( l \) is the length and \( A \) is the cross-sectional area of the ribbon. Considering that \( l = 0.5 \) cm \( = 0.005 \) m and \( A = b \times d = 0.002 \) m \( \times \) \( 0.00005 \) m \( = 10^{-7} \) \( \mathrm{m}^{2} \), we get \( R = 0.016 \) Ohm-m \( \times \frac{0.005 \) m}{\( 10^{-7} \) \( \mathrm{m}^{2}} \) \( = 0.8 \) Ohm. Now, we can calculate \( I = \frac{V}{R} = \frac{1}{0.8} = 1.25 \) A. Substituting \( I \), \( B \), \( d \), \( n \), and \( e = 1.6 \times 10^{-19} \) C in the equation for \( V_H \), we get \( V_H = \frac{1.25 \times 0.1 \times 0.00005}{2 \times 10^{21} \times 1.6 \times 10^{-19}} = 0.0000049 \) V or 4.9 µV.

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Key Concepts

These are the key concepts you need to understand to accurately answer the question.

Hall Effect
The Hall effect is a phenomenon discovered by Edwin Hall in 1879, which occurs when a conductor or semiconductor with current flowing through it is introduced to a perpendicular magnetic field. This effect creates an electric potential, known as the Hall voltage, across the conductor. This voltage can be measured and is directly proportional to the strength of the magnetic field and the current, while being inversely proportional to the charge carrier density.

When considering the Hall effect in semiconductors, one might think of the movement of charge carriers as similar to the way water flows through a pipe. However, when a magnetic field is present, these charge carriers experience a force (Lorentz Force) that pushes them to one side of the conductor, creating a voltage difference. This voltage difference is the Hall voltage, which is what is measured in the given exercise. The concept becomes particularly fascinating when we apply it to determine the type of charge carrier (positive or negative) in a material and to measure magnetic fields, current through a conductor, and the material's charge carrier density.
Magnetic Fields
Magnetic fields are invisible forces that exert a push or pull on magnetic materials and moving charges. Think of them like the water currents that carry along leaves, directing them in a certain path—the movement not visible to the eye but evident through its effect on the objects within it. The strength of a magnetic field is measured in Tesla (T) or Gauss, with 1 Tesla being a very strong field, equivalent to 10,000 Gauss.

In the context of our Hall effect exercise, the presence of a magnetic field is crucial as it is responsible for bending the path of the conduction electrons in the semiconductor. This deflection leads to the buildup of a charge difference, and thus, a voltage that can be detected and measured. The stronger the magnetic field, the larger the voltage—illustrating the direct relationship between magnetic field strength and the Hall voltage.
Electrical Resistivity
Electrical resistivity is a fundamental property that describes how strongly a material opposes the flow of electric current. You can think of it as the electrical equivalent to friction in mechanical systems—a higher resistivity means more resistance to the movement of charge carriers. It's measured in ohm-meters (Ω*m) and varies greatly between materials, influencing how they are used in electronic components.

In our Hall effect exercise, we make use of the resistivity to derive the electrical resistance of the semiconductor ribbon by considering its length and cross-sectional area. From there, we can calculate the current flowing in the ribbon, which is an essential parameter for determining the Hall voltage. It's important to note that while resistivity gives us an idea of the material's opposition to current, resistance quantifies the opposition in a particular piece of that material.
Conduction Electrons
Conduction electrons are the particles within a metal or semiconductor that are free to move from atom to atom and carry electric current when a voltage is applied. They are the workforce behind electrical conduction, moving with ease throughout the material, much like a crowd moving through an open plaza. In pure metals, the number of conduction electrons is vast, while in semiconductors, this number can be controlled through doping, a process where impurities are added to change the material's electrical properties.

In the Hall probe exercise, we focused on arsenic-doped silicon, which doesn't have as many conduction electrons as a metal but enough to carry a significant current when voltage is applied. Knowing the density of these conduction electrons helps us calculate the current and, subsequently, the Hall voltage, drawing a direct link between the microscopic properties of the material and the macroscopic phenomena we observe and utilize in devices and sensors.

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Most popular questions from this chapter

Field from an infinite wire \(* *\) Use the Biot-Savart law to calculate the magnetic field at a distance \(b\) from an infinite straight wire carrying current \(I\).

Scaled-down solenoid ** Consider two solenoids, one of which is a tenth-scale model of the other. The larger solenoid is 2 meters long, 1 meter in diameter, and is wound with \(1 \mathrm{~cm}\) diameter copper wire. When the coil is connected to a \(120 \mathrm{~V}\) direct-current generator, the magnetic field at its center is 1000 gauss. The scaled-down model is exactly onetenth the size in every linear dimension, including the diameter of the wire. The number of turns is the same, and it is designed to provide the same central field. (a) Show that the voltage required is the same, namely \(120 \mathrm{~V}\). (b) Compare the coils with respect to the power dissipated and the difficulty of removing this heat by some cooling means.

Vector potential inside a wire ** A round wire of radius \(r_{0}\) carries a current \(I\) distributed uniformly over the cross section of the wire. Let the axis of the wire be the \(z\) axis, with \(\hat{z}\) the direction of the current. Show that a vector potential of the form \(\mathbf{A}=A_{0} \hat{\mathbf{z}}\left(x^{2}+y^{2}\right)\) will correctly give the magnetic field \(\mathbf{B}\) of this current at all points inside the wire. What is the value of the constant, \(A_{0}\) ?

Field in the plane of a ring ** A ring with radius \(R\) carries a current \(I\). Show that the magnetic field due to the ring, at a point in the plane of the ring, a distance \(a\) from the center (either inside or outside the ring), is given by $$ B=2 \cdot \frac{\mu_{0} I}{4 \pi} \int_{0}^{\pi} \frac{(R-a \cos \theta) R d \theta}{\left(a^{2}+R^{2}-2 a R \cos \theta\right)^{3 / 2}} $$ Hint: The easiest way to handle the cross product in the BiotSavart law is to write the Cartesian coordinates of \(d l\) and \(\mathbf{r}\) in terms of an angle \(\theta\) in the ring. This integral can't be evaluated in closed form (except in terms of elliptic functions), but it can always be evaluated numerically if desired. For the special case of \(a=0\) at the center of the ring, the integral is easy to do; verify that it yields the result given in

Field at the center of a disk * A disk with radius \(R\) and surface charge density \(\sigma\) spins with angular frequency \(\omega\). What is the magnetic field at the center?

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