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Chapter 20: Problem 103

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the (A) crystal structure. (B) variation of the number of charge carriers with temperature. (C) type of bonding. (D) variation of scattering mechanism with temperature.

Short Answer

Expert verified
The correct answer is (B) variation of the number of charge carriers with temperature. This difference between metals and semiconductors in their resistance behavior with temperature arises primarily due to the distinct variation in the number of charge carriers (electrons and holes) with increasing temperature.

Step by step solution

01

Option A: Crystal Structure

The crystal structure of both metals and semiconductors influences their electrical properties. However, the difference in their resistance behavior with temperature is not primarily due to the difference in their crystal structures.
02

Option B: Variation of the Number of Charge Carriers with Temperature

The variation of the number of charge carriers with temperature is a significant factor that affects the resistance of materials. In metals, the number of charge carriers (electrons) is relatively constant with increasing temperature. On the other hand, in semiconductors, the number of charge carriers (electrons and holes) increases with increasing temperature. This difference leads to the distinct behavior of metals and semiconductors when it comes to their resistance with temperature.
03

Option C: Type of Bonding

The type of bonding for metals (metallic bonds) and semiconductors (covalent bonds) plays a role in their electrical properties. However, the difference in their resistance behavior with temperature is not primarily due to the difference in their bonding types.
04

Option D: Variation of Scattering Mechanism with Temperature

Scattering mechanisms of electrons indeed depend on temperature, and they affect the resistance of a material. However, the primary reason for the difference in resistance behavior with temperature in metals and semiconductors is the variation in the number of charge carriers with temperature, not the variation of scattering mechanism with temperature. Considering the analysis of all the options, option B offers the most appropriate answer:
05

Answer

The correct answer is (B) variation of the number of charge carriers with temperature.

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