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How does the electrical conductivity of a semiconductor change as the size of the band gap increases? Explain.

Short Answer

Expert verified
As the band gap increases, electrical conductivity decreases.

Step by step solution

01

Understanding Electrical Conductivity in Semiconductors

Electrical conductivity in semiconductors is determined by the number of charge carriers (electrons and holes) that can move across the energy band structure under an applied voltage. The ease with which these charge carriers can move from the valence band to the conduction band is crucial.
02

Defining the Band Gap

The band gap is the energy difference between the valence band and the conduction band in a material. It represents the energy required to move an electron from the valence band to the conduction band.
03

Relationship Between Band Gap Size and Conductivity

In semiconductors, a smaller band gap means that electrons require less energy to be excited from the valence band to the conduction band, thus increasing the number of free charge carriers and enhancing electrical conductivity.
04

Impact of Increasing Band Gap Size

When the band gap increases, more energy is needed to excite electrons across the gap. This results in fewer electrons being thermally excited to the conduction band, thereby reducing the number of charge carriers and, consequently, decreasing the electrical conductivity.
05

Conclusion on Conductivity and Band Gap Size

Therefore, as the size of the band gap in a semiconductor increases, its electrical conductivity decreases due to the reduced availability of free charge carriers.

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Key Concepts

These are the key concepts you need to understand to accurately answer the question.

Band Gap
The band gap is a fundamental concept when discussing the electrical properties of semiconductors. It represents the energy difference between the valence band, which is filled with electrons, and the conduction band, where electrons can move freely and conduct current. In essence, the band gap is like an energy barrier that electrons need to "jump" over to participate in conduction.
To move an electron from the valence band to the conduction band, a certain amount of energy must be provided—this is the band gap energy.
Typical semiconductors such as silicon have a moderate band gap, making it easier for electrons to move to the conduction band compared to insulators, which have a larger band gap.
However, if the band gap becomes too large, as often found in insulators, it is difficult for electrons to gain the necessary energy to cross into the conduction band, leading to poor conductivity.
Charge Carriers
Charge carriers are crucial for electrical conduction in semiconductors. They come in two types: electrons and holes.
Electrons are negatively charged and can carry electrical current when they move through the material.
Holes represent the absence of an electron in the valence band and can also move, behaving as positive charge carriers. When an electron jumps to the conduction band, it leaves behind a hole, allowing others to move around in the material.
In semiconductors, the number of charge carriers can be significantly affected by the band gap. A smaller band gap means more electrons can gain enough energy to jump to the conduction band, increasing the charge carriers and thus the electrical conductivity.
Conversely, a larger band gap means fewer charge carriers, as there are not enough electrons crossing the gap to contribute to conduction.
Energy Bands
Energy bands are the allowed energy levels that electrons in a solid can have. In semiconductors, there are two primary bands to consider: the valence band and the conduction band.
The valence band is the highest range of electron energies where electrons are normally present at low temperatures, while the conduction band is a higher range that electrons can move to for conduction.
In between these two bands lies the band gap, an energy region where no electron states exist.
For conduction to occur, electrons must move from the valence band to the conduction band, crossing the band gap.
The structure of these energy bands and the size of the band gap directly influence the semiconductor's electrical properties. Small band gaps mean electrons can more easily move into the conduction band, allowing the material to be a better conductor. Meanwhile, large band gaps require more energy to promote electrons to the conduction band, resulting in reduced electrical conductivity.

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Most popular questions from this chapter

The Mond process for purifying nickel involves the reaction of impure nickel with carbon monoxide at about \(150^{\circ} \mathrm{C}\) to give nickel tetracarbonyl. The nickel tetracarbonyl then decomposes to pure nickel at about \(230{ }^{\circ} \mathrm{C}\) : \(\begin{aligned} \mathrm{Ni}(s)+4 \mathrm{CO}(g) \rightleftharpoons & \mathrm{Ni}(\mathrm{CO})_{4}(g) \\ & \Delta H^{\circ}=-160.8 \mathrm{~kJ} ; \Delta S^{\circ}=-410 \mathrm{~J} / \mathrm{K} \end{aligned}\) The values of \(\Delta H^{\circ}\) and \(\Delta S^{\circ}\) apply at \(25^{\circ} \mathrm{C}\), but they are relatively independent of temperature and can be used at \(150{ }^{\circ} \mathrm{C}\) and \(230^{\circ} \mathrm{C} .\) (a) Calculate \(\Delta G^{\circ}\) and the equilibrium constant \(K_{\mathrm{p}}\) at \(150^{\circ} \mathrm{C}\). (b) Calculate \(\Delta G^{\circ}\) and the equilibrium constant \(K_{\mathrm{p}}\) at \(230^{\circ} \mathrm{C}\). (c) Why does the reaction have a large negative value for \(\Delta S^{\circ} ?\) Show that the change in \(\Delta G^{\circ}\) with increasing temperature is consistent with a negative value of \(\Delta S^{\circ}\). (d) Show that the change in \(K_{\mathrm{p}}\) with increasing temperature is consistent with a negative value of \(\Delta H^{\circ} .\)

Could tungsten be produced in a blast furnace by the reduction of \(\mathrm{WO}_{3}\) ? Explain.

Why is the molecular orbital theory for metals called band theory?

When iron ore is reduced in a blast furnace, some of the \(\mathrm{SiO}_{2}\) impurity is also reduced by reaction with carbon to give elemental silicon and carbon monoxide. The silicon is subsequently reoxidized in the basic oxygen process, and the resulting \(\mathrm{SiO}_{2}\) reacts with \(\mathrm{CaO}\), yielding slag, which is then separated from the molten steel. Write balanced equations for the three reactions involving \(\mathrm{SiO}_{2}\).

The mineral wustite is a nonstoichiometric iron oxide with the empirical formula \(\mathrm{Fe}_{x} \mathrm{O}\), where \(x\) is a number slightly less than \(1 .\) Wustite can be regarded as an \(\mathrm{FeO}\) in which some of the Fe sites are vacant. It has a density of \(5.75 \mathrm{~g} / \mathrm{cm}^{3}\), a cubic unit cell with an edge length of \(431 \mathrm{pm}\), and a face-centered cubic arrangement of oxygen atoms. (a) What is the value of \(x\) in the formula \(\mathrm{Fe}_{x} \mathrm{O}\) ? (b) Based on the formula in part (a), what is the average oxidation state of Fe? (c) Each Fe atom in wustite is in either the \(+2\) or the \(+3\) oxidation state. What percent of the Fe atoms are in the \(+3\) oxidation state? (d) Using \(\mathrm{X}\) rays with a wavelength of \(70.93 \mathrm{pm}\), at what angle would third-order diffraction be observed from the planes of atoms that coincide with the faces of the unit cells? Thirdorder diffraction means that the value of \(n\) in the Bragg equation is equal to 3 . (e) Wustite is a semiconducting iron(II) oxide in which some of the \(\mathrm{Fe}^{2+}\) has been replaced by \(\mathrm{Fe}^{3+}\). Should it be described as an \(n\) -type or a \(p\) -type semiconductor? Explain.

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